新型梭状Bi2S3纳米晶体在可见光下光催化还原Cr(VI)

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Zhenning Yang , Xiuyue Jin , Hua Lu , Shuzhi Tong, Jue Chen, Meng Deng, Fei Chen
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引用次数: 0

摘要

工业废水中的重金属污染对环境和公众健康构成重大威胁。为了解决这个问题,各种纳米晶体材料作为水处理的光催化剂出现了。本研究利用聚乙烯吡咯烷酮(PVP)的超高分子量,通过水热法合成了一种新型的梭状Bi2S3纳米晶体。该材料在水处理中表现出优异的性能,特别是在可见光下光催化将Cr(VI)还原为Cr(III)。梭状Bi2S3光催化高浓度Cr(VI) (10 mg/L)的还原效率在5 min (k = 1.4754 min−1)内达到接近100%。原位氧化剂捕获实验证实,∙O2−是还原Cr(VI)的主要活性物质。该研究强调了一种具有成本效益和可扩展的制造Bi2S3纳米晶体的方法,为纳米材料的形态控制和工业水处理中重金属修复的应用提供了巨大的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Photocatalytic reduction of Cr(VI) by novel shuttle-like Bi2S3 nanocrystals under visible light

Photocatalytic reduction of Cr(VI) by novel shuttle-like Bi2S3 nanocrystals under visible light
Heavy metal contamination in industrial wastewater poses a significant threat to the environment and public health. To address this issue, various nanocrystalline materials have emerged as promising photocatalysts for water treatment. In this research, by using ultra-high molecular weight of polyvinylpyrrolidone (PVP), a novel shuttle-like Bi2S3 nanocrystal was synthesized via a facile hydrothermal method. The material exhibited outstanding performance in water treatment, particularly in the photocatalytic reduction of Cr(VI) to Cr(III) under visible light. The photocatalytic performance of high concentration Cr(VI) (10 mg/L) reduction efficiency with shuttle-like Bi2S3 can reach near 100 % in only 5 min (k = 1.4754 min−1). In-situ oxidants capture experiments confirmed ∙O2− was the main active species in the reduction of Cr(VI). This study highlights a cost-effective and scalable approach to fabricating Bi2S3 nanocrystals, offering significant potential for morphology control of nanomaterials and industrial water treatment applications for heavy metal remediation.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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