ScAlN-on-SiC Kᵤ-波段Sezawa固载二维模谐振器

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-02-13 DOI:10.1109/LED.2025.3541373

Luca Colombo;Luca Spagnuolo;Kapil Saha;Gabriel Giribaldi;Pietro Simeoni;Matteo Rinaldi

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引用次数: 0

摘要

这封信报告了固体安装的二维模式谐振器（S2MRs）在碳化硅（SiC）上的30%掺钪氮化铝（ScAlN）中利用高度优化的Sezawa模式，工作在16 GHz附近。实验结果表明，机械质量因子（${Q}_{m}$）高达380，波德质量因子（${Q}_{\textit {Bode}}$）接近500，机电耦合系数（${k}_{t}}^{{2}}$）为4.5%，总体优值（$\textit {FOM} = {Q}_{m} \cdot {k}_{t}}^{{2}}$）超过17，功率处理大于20 dBm，器件与$50~\Omega $紧密匹配。据作者所知，S2MRs在ku波段的固体安装谐振器中表现出最高的关键性能指标（kpi），为快速衬底上的纳米声学器件与高功率电子器件的集成铺平了道路，为军事和恶劣环境应用量身定制。

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ScAlN-on-SiC Kᵤ-Band Sezawa Solidly-Mounted Bidimensional Mode Resonators

This letter reports on Solidly-Mounted Bidimensional Mode Resonators (S2MRs) exploiting a highly-optimized Sezawa mode in 30% Scandium-doped Aluminum Nitride (ScAlN) on Silicon Carbide (SiC) and operating near 16 GHz. Experimental results demonstrate mechanical quality factors (

${Q}_{m}$

) as high as 380, Bode quality factors (

${Q}_{\textit {Bode}}$

) approaching 500, electromechanical coupling coefficients (

${k}_{t}^{{2}}$

) of 4.5%, an overall Figure of Merit (

$\textit {FOM} = {Q}_{m} \cdot {k}_{t}^{{2}}$

) exceeding 17, and power handling greater than 20 dBm for devices closely matched to

$50~\Omega $

. To the best of the authors’ knowledge, S2MRs exhibit the highest Key Performance Indicators (KPIs) among solidly mounted resonators in the Ku-band, paving the way for the integration of nanoacoustic devices on fast substrates with high-power electronics, tailored for military and harsh-environment applications.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.