共掺杂对溶液法制备InLiAlO薄膜晶体管性能的影响

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Weixin Cheng , Honglong Ning , Han Li , Xiaoqin Wei , Zeneng Deng , Zhihao Liang , Xiao Fu , Rui Zhou , Rihui Yao , Junbiao Peng
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Therefore, the corresponding device performance should be improved. The undoped device had moderate mobility, low <em>I</em><sub>on</sub>/<em>I</em><sub>off</sub>, and high subthreshold swing (SS). The TFT doped with 10 at% Li exhibited higher mobility and lower SS, while the one with 10 at% Al doping showed decreased mobility, and improved <em>I</em><sub>on</sub>/<em>I</em><sub>off</sub> and SS. It is inferred that lithium doping promoted the transformation of hydroxides to oxides, forming more oxides and reducing hydroxide-related defects, but may generate oxygen vacancies. The aluminum doping suppressed the formation of oxygen vacancies and inhibited crystallization. After optimization, Li:Al = 2:1 is the best doping ratio, featuring a saturation mobility of 5.30 cm<sup>2</sup> V<sup>−1</sup>·s<sup>−1</sup>, a current on/off ratio of 7.48 × 10<sup>5</sup>, and a sub-threshold swing of 0.25 V/decade. 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引用次数: 0

摘要

氧化铟薄膜晶体管具有中等带隙,高载流子浓度和迁移率,使其能够在大电流中使用。但它们可能难以关闭,并且泄漏电流大,阈值电压高,功耗大。这些都可以通过共掺杂来解决,共掺杂可以控制薄膜的缺陷和质量。本研究采用旋涂法制备了Li:Al比分别为1:0、2:1、1:1、1:2和0:1 (Li + Al = 10 at%)的InLiAlO薄膜和tft。结果表明,这两种掺杂剂都能显著减少缺陷和氧空位,提高致密性。随着Al添加量的增加,晶化受到抑制。因此,应提高相应的设备性能。未掺杂的器件具有中等迁移率,低离子/离合,高亚阈值摆幅(SS)。掺10 at% Li的TFT具有较高的迁移率和较低的SS,而掺10 at% Al的TFT具有较低的迁移率,提高了Ion/Ioff和SS。由此推断,锂的掺杂促进了氢氧化物向氧化物的转变,形成了更多的氧化物,减少了氢氧化物相关的缺陷,但可能产生氧空位。铝的掺杂抑制了氧空位的形成,抑制了结晶。优化后,Li:Al = 2:1为最佳掺杂比,饱和迁移率为5.30 cm2 V−1·s−1,电流通/关比为7.48 × 105,亚阈值摆幅为0.25 V/ 10年。相应的薄膜具有较高的光滑度和密度,表明质量高,内部空洞少。结果表明,共掺杂是提高氧化铟基tft性能的有效方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of co-doping on performance of solution-processed InLiAlO thin film transistors
Indium oxide thin film transistors have a moderate bandgap, high carrier concentration, and mobility, enabling their use in high currents. But they may be hard to turn off and have high leakage current, threshold voltage, and power consumption. These can be solved by co-doping, which can control the defects and quality of the films. In this study, InLiAlO thin films and TFTs with Li:Al ratios of 1:0, 2:1, 1:1, 1:2, and 0:1 (Li + Al = 10 at%) were prepared using spin-coating. It is found that both dopants significantly reduced defects and oxygen vacancies, and increased compactness. Moreover, with the increase of Al addition, the crystallization was inhibited. Therefore, the corresponding device performance should be improved. The undoped device had moderate mobility, low Ion/Ioff, and high subthreshold swing (SS). The TFT doped with 10 at% Li exhibited higher mobility and lower SS, while the one with 10 at% Al doping showed decreased mobility, and improved Ion/Ioff and SS. It is inferred that lithium doping promoted the transformation of hydroxides to oxides, forming more oxides and reducing hydroxide-related defects, but may generate oxygen vacancies. The aluminum doping suppressed the formation of oxygen vacancies and inhibited crystallization. After optimization, Li:Al = 2:1 is the best doping ratio, featuring a saturation mobility of 5.30 cm2 V−1·s−1, a current on/off ratio of 7.48 × 105, and a sub-threshold swing of 0.25 V/decade. The corresponding films have high smoothness and density, indicating high quality and fewer internal voids. It is suggested that co-doping is a promising strategy for improving the performance of indium oxide-based TFTs.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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