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IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2025-03-19 DOI:10.1016/j.mssp.2025.109452

S. Karunakaran , V. Vijay , S. Harish , M. Navaneethan , J. Archana

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引用次数: 0

摘要

硅化镁因其毒性小、可广泛获得和热稳定性而被认为是一种潜在的热电材料，在中高温（500-900 K）应用中备受关注。本研究通过真空熔炼和热压法合成了掺杂有铋和锑的 n 型硅化镁样品。利用高分辨率透射电子显微镜（HRTEM）分析确认了样品的多晶性质，而 X 射线衍射（XRD）分析则确认了样品的相纯度。在 Mg2Si 中掺杂铋锑有效地将载流子浓度提高到 2 × 1018 cm-3，从而提高了 140 Scm-1 的电导率。塞贝克系数提高到 -168 μVK-1，电导率提高后，功率因数大大提高到 327 μWm-1K-2，与未掺杂的 Mg2Si 样品相比提高了 197%。此外，由于锑和铋位错的存在，晶格热导率急剧下降至 2.9 Wm-1K-1，从而使 753 K 时的热电功率因数提高到 0.08。

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Synergistic effect of mass and strain field phonon scattering in Bi and Sb co-doped Mg2Si for thermoelectric applications

Magnesium silicide is considered as a potential thermoelectric material because of its minimal toxicity, widespread availability, and thermal stability which attracted significant attention for mid to high temperature (500–900 K) application. In this study, n-type magnesium silicide samples co-doped with Bi and Sb were synthesized via vacuum melting and hot-pressing method. Polycrystalline nature of the samples was confirmed using High-resolution transmission electron microscopy (HRTEM) analysis, while X-ray diffraction (XRD) analysis confirmed the phase purity. Co-doping of Bi-Sb in Mg₂Si effectively enhanced the carrier concentration to 2 × 10¹⁸ cm⁻³, leading to an improved electrical conductivity of 140 Scm⁻¹. The enhanced Seebeck co-efficient of −168 μVK⁻¹ and improved electrical conductivity greatly increased the power factor in to 327 μWm⁻¹K⁻², which is ∼197 % enhanced when compared to the undoped Mg₂Si sample. In addition, the presence of dislocations raised from Sb and Bi drastically decreased the lattice thermal conductivity to 2.9 Wm⁻¹K⁻¹, resulting in an improved thermoelectric figure of merit of 0.08 at 753 K.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.