高激活频率功能可能过渡故障的现场测试

IF 2.5 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Irith Pomeranz;Yervant Zorian
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引用次数: 0

摘要

受最新技术中芯片可靠性要求的推动,本文开发了一种具有以下特征的定期现场测试方法。目标故障是功能上可能的过渡故障,这意味着故障可以影响芯片的正确功能运行。在功能运行过程中,芯片中具有较高开关活动的区域的故障位点被认为是更重要的目标。这是因为更高的切换活动会导致更快的老化,因此,更高的缺陷可能性。在本文中描述的方法下,功能切换活动的计算,功能可能的转换故障的识别,以及适用于现场的测试的生成,都是使用相同的功能测试序列集执行的。基准电路的实验结果表明,少量的测试足以检测高开关活动区域的功能可能的过渡故障,从而可以在芯片的生命周期内频繁地应用测试。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
In-Field Testing of Functionally-Possible Transition Faults With High Activation Frequencies
Motivated by the reliability requirements of chips in state-of-the-art technologies, this article develops an approach to periodic in-field testing that has the following features. The faults targeted are functionally-possible transition faults, implying that the faults can affect the correct functional operation of a chip. The fault sites in areas of the chip with higher switching activities during functional operation are considered important to target more often. This is because a higher switching activity can lead to faster aging, and therefore, a higher likelihood for defects. Under the approach described in this article, the computation of the functional switching activity, the identification of functionally-possible transition faults, and the generation of tests that are applicable in-field, are performed using the same set of functional test sequences. Experimental results for benchmark circuits demonstrate that small numbers of tests are sufficient for detecting functionally-possible transition faults in areas with high switching activities, making it possible to apply the tests frequently during the lifetime of the chip.
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来源期刊
IEEE Transactions on Device and Materials Reliability
IEEE Transactions on Device and Materials Reliability 工程技术-工程:电子与电气
CiteScore
4.80
自引率
5.00%
发文量
71
审稿时长
6-12 weeks
期刊介绍: The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.
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