石墨烯基Dirac-Source fet通路电阻的传递矩阵建模

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2025-01-24 DOI:10.1109/JEDS.2025.3533599

Erica Baccichetti;David Esseni

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引用次数: 0

摘要

在本文中，我们首先提出了一个基于转移矩阵方法的模型来描述石墨烯p - n结的弹道电阻，并将该模型应用于狄拉源场效应管。事实上，基于石墨烯的diac - source FET的通路区域包括一个$p$ - $n$结，我们表明这对这些晶体管的导通电流有相当大的影响。特别是，我们首先通过比较计算的$p$ - $n$结电阻与先前的实验和模拟来验证我们的模型。然后，我们将转移矩阵描述应用到纳米级狄拉源场效应管的虚拟源模型中，并讨论了嵌入在器件访问区域的$p$ - $n$结对$\textrm {I}_{DS}$ - $\textrm {V}_{GS}$曲线的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Transfer-Matrix Modeling of the Access Region Resistance in Graphene Based Dirac-Source FETs

In this paper we first present a model based on the transfer-matrix methodology to describe the ballistic resistance in a graphene

$p$

–

$n$

junction, and employ the model in Dirac-Source FETs. In fact, the access region of a graphene based Dirac-Source FET includes a

$p$

–

$n$

junction, and we show that this has a sizeable impact on the on-state current of these transistors. In particular, we first validate our model by comparing the calculated

$p$

–

$n$

junction resistance with previous experiments and simulations. Then, we exploit the transfer-matrix description into a virtual-source model for nanoscale Dirac-Source FETs, and discuss the influence on the

$\textrm {I}_{DS}$

–

$\textrm {V}_{GS}$

curves of the

$p$

–

$n$

junction that is embedded in the access region of the device.

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.