理解igzo沟道效应管的慢擦除操作：正电荷产生动力学的作用

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2025-02-12 DOI:10.1109/JEDS.2025.3541418

Zhuo Chen;Nicolò Ronchi;Roman Izmailov;Hongwei Tang;Mihaela Ioana Popovici;Harold Dekkers;Alexandru Pavel;Geert Van den Bosch;Maarten Rosmeulen;Valeri V. Afanas’Ev;Jan Van Houdt

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引用次数: 0

摘要

本工作系统地研究了igzo通道背控场效应管的编程和擦除动力学，发现擦除操作明显慢于编程。采用IGZO顶电极的铁电电容器的pnd测量表明，负偏压下的铁电开关动力学受到正电荷产生的限制。确定了两个潜在的物理机制：(1)igzo -带隙供体态，可以通过向传导带发射电子获得正电荷，并在编程过程中可逆中和，有助于铁电开关并限制了开关动力学；(2)氢掺杂到IGZO中，其进行速度较慢且不可逆，因此无法支持铁电开关。这项工作强调了加深对擦除动力学的理解的重要性，以实现氧化物半导体通道场效应管的低延迟和高耐用性应用。

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Understanding the Slow Erase Operation in IGZO-Channel FeFETs: The Role of Positive Charge Generation Kinetics

This work systematically investigates the programming and erasing dynamics of IGZO-channel back-gated FeFETs, uncovering that erase operation is significantly slower than programming. PUND measurements in ferroelectric capacitors with IGZO top electrodes reveal that the ferroelectric switching kinetics under negative bias are limited by the generation of positive charges. Two underlying physical mechanisms are identified: (1) IGZO-bandgap donor states, which can get positively charged by emitting electrons to Conduction Band and reversibly neutralized during programming, help ferroelectric switching and limits the switching kinetics; and (2) hydrogen doping into IGZO, which proceeds at a much slower rate and is irreversible, thus incapable of supporting ferroelectric switching. This work emphasizes the importance to deepen the understanding of erasing kinetics to enable low-latency, and high-endurance applications of oxide-semiconductor-channel FeFETs.

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.