基于故障注入的Arm Cortex-M型soc早期辐射诱导软误差评估

IF 2.5 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Leonardo Gobatto;Fabio Benevenuti;Rodrigo Possamai Bastos;Nemitala Added;Saulo Alberton;Eduardo Macchione;Vitor Aguiar;Nilberto Medina;Fernanda Kastensmidt;Jose Rodrigo Azambuja
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引用次数: 0

摘要

这项工作研究了中子和重离子辐射引起的软误差对Arm Cortex-M片上系统的影响,并提出了一种故障注入方法,用于早期评估这些对嵌入式处理器的影响。然后,我们的方法被用来评估软件设计探索和实现容错技术的有效性。我们将重离子和中子辐射实验连接起来,并模拟在这些资源受限的低成本处理器上运行的应用程序的故障注入。我们的案例研究包括裸机应用程序和FreeRTOS操作系统的基准场景,为小型卫星任务的部署量身定制。结果表明,该方法的可靠性曲线与辐射实验结果一致。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Early Radiation-Induced Soft-Error Assessment of Arm Cortex-M SoCs Through Fault Injection
This work investigates the impact of neutron and heavy ion radiation-induced soft errors on Arm Cortex-M Systems-on-Chip and proposes a fault injection methodology designed for the early assessment of these effects on the embedded processors. Our methodology is then employed to assess the effectiveness of software design exploration and implementing fault tolerance techniques. We connect heavy ion and neutron radiation experiments and emulate fault injections for applications running on these resource-constrained low-cost processors. Our case studies include benchmark scenarios with bare-metal applications and the FreeRTOS operating system, tailored for deployment in small satellite missions. Results show that our proposed methodology presents reliability curves that align with those obtained from the radiation experiments.
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来源期刊
IEEE Transactions on Device and Materials Reliability
IEEE Transactions on Device and Materials Reliability 工程技术-工程:电子与电气
CiteScore
4.80
自引率
5.00%
发文量
71
审稿时长
6-12 weeks
期刊介绍: The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.
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