ZnO:Yb LED的强近红外电致发光特性

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-03-12 DOI:10.1016/j.sse.2025.109102

Qingxue Zhao , Shenwei Wang , Zhengmao Wen , Weifang Zhang , Xiaoxia Duan , Lixin Yi

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引用次数: 0

摘要

掺杂稀土（RE）的氧化锌电致发光因其纯净而锐利的发光特性而值得研究。在这项工作中，我们报告了氧化锌：镱发光二极管（LED），并测试了它们的电致发光特性。通过调整掺杂镱的浓度和优化 ZnO:Yb 薄膜的退火参数，结果表明 ZnO:Yb 发光二极管能够在 975 nm 和 1004 nm 处产生强烈的近红外发射。我们认为，冲击激发是 ITO/PEDOT:PSS/ZnO:Yb/n-Si 发光二极管电致发光的主要机制。这些结果被认为是在近红外发光二极管中实现稀土掺杂半导体电致发光的有效策略。

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Intense near-infrared electroluminescence properties from ZnO:Yb LED

Rare-earth (RE) doped zinc oxide electroluminescence is worthy of study due to its pure and sharp luminescence characteristics. In this work, we report ZnO:Yb light-emitting diodes (LED) and test their electroluminescence properties. Through adjusting the concentration of ytterbium doping and optimizing of annealing parameters for ZnO:Yb thin films, the results show that ZnO:Yb light-emitting diodes are capable of generating intense near-infrared emission at 975 nm and 1004 nm. We contend that impact excitation is the predominant mechanism underlying the electroluminescence in ITO/PEDOT:PSS/ZnO:Yb/n-Si light-emitting diodes. These results are considered an effective strategy for rare-earth-doped semiconductor electroluminescence in near-infrared light-emitting diodes.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.