用于先进封装失效分析的快速高分辨率x射线纳米断层扫描

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-03-14 DOI:10.1016/j.microrel.2025.115694

T. Dreier, D. Nilsson, J. Hållstedt

{"title":"用于先进封装失效分析的快速高分辨率x射线纳米断层扫描","authors":"T. Dreier, D. Nilsson, J. Hållstedt","doi":"10.1016/j.microrel.2025.115694","DOIUrl":null,"url":null,"abstract":"<div><div>Advanced packaging in electronics involves integrating semiconductor devices and sensors into a unified package, often employing complex 3D structures for enhanced performance and efficiency. As electronic components become smaller and more densely packed, conventional 2D X-ray radiography is not sufficient for inspection. Here we demonstrate the use of nano-CT with a high bandwidth memory (HBM) example illustrating the potential of fast detection of sub-micron voids and cracks in micro-bumps. Using a 30 s overview scan at 2.6 μm voxel size for navigation, a region is selected for a high-resolution scan with a voxel size of 600 nm to analyse 20 μm micro-bumps in between DRAM layers. Additionally, high-resolution laminography is performed showing the differences of the 2 techniques. The results show how high-resolution nano-CT can effectively be used for fast failure analysis and R&D as well as important feedback to production ramp up and yield improvements of advanced packaging technologies.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115694"},"PeriodicalIF":1.6000,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fast and high-resolution X-ray nano tomography for failure analysis in advanced packaging\",\"authors\":\"T. Dreier, D. Nilsson, J. Hållstedt\",\"doi\":\"10.1016/j.microrel.2025.115694\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Advanced packaging in electronics involves integrating semiconductor devices and sensors into a unified package, often employing complex 3D structures for enhanced performance and efficiency. As electronic components become smaller and more densely packed, conventional 2D X-ray radiography is not sufficient for inspection. Here we demonstrate the use of nano-CT with a high bandwidth memory (HBM) example illustrating the potential of fast detection of sub-micron voids and cracks in micro-bumps. Using a 30 s overview scan at 2.6 μm voxel size for navigation, a region is selected for a high-resolution scan with a voxel size of 600 nm to analyse 20 μm micro-bumps in between DRAM layers. Additionally, high-resolution laminography is performed showing the differences of the 2 techniques. The results show how high-resolution nano-CT can effectively be used for fast failure analysis and R&D as well as important feedback to production ramp up and yield improvements of advanced packaging technologies.</div></div>\",\"PeriodicalId\":51131,\"journal\":{\"name\":\"Microelectronics Reliability\",\"volume\":\"168 \",\"pages\":\"Article 115694\"},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2025-03-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics Reliability\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0026271425001076\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271425001076","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

电子领域的先进封装涉及将半导体器件和传感器集成到一个统一的封装中，通常采用复杂的3D结构来提高性能和效率。随着电子元件变得越来越小，越来越密集，传统的二维x射线摄影已不足以进行检查。在这里，我们展示了使用纳米ct与高带宽存储器（HBM）的例子，说明了在微凸起中快速检测亚微米空隙和裂纹的潜力。使用2.6 μm体素尺寸的30 s概述扫描进行导航，选择一个区域进行600 nm体素尺寸的高分辨率扫描，以分析DRAM层之间20 μm的微凸起。此外，进行了高分辨率层析成像，显示了两种技术的差异。研究结果表明，高分辨率纳米ct可以有效地用于快速故障分析和研发，以及对先进封装技术的产量提升和良率改进提供重要反馈。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Fast and high-resolution X-ray nano tomography for failure analysis in advanced packaging

Advanced packaging in electronics involves integrating semiconductor devices and sensors into a unified package, often employing complex 3D structures for enhanced performance and efficiency. As electronic components become smaller and more densely packed, conventional 2D X-ray radiography is not sufficient for inspection. Here we demonstrate the use of nano-CT with a high bandwidth memory (HBM) example illustrating the potential of fast detection of sub-micron voids and cracks in micro-bumps. Using a 30 s overview scan at 2.6 μm voxel size for navigation, a region is selected for a high-resolution scan with a voxel size of 600 nm to analyse 20 μm micro-bumps in between DRAM layers. Additionally, high-resolution laminography is performed showing the differences of the 2 techniques. The results show how high-resolution nano-CT can effectively be used for fast failure analysis and R&D as well as important feedback to production ramp up and yield improvements of advanced packaging technologies.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.