微量Co3O4/ZIF-67具有高的甲苯检测能力

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Fabiola C. Paciencia , Reinaldo dos S. Theodoro , Gustavo S.M. Santos , Tarcísio M. Perfecto , Diogo P. Volanti
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引用次数: 0

摘要

环境监测越来越侧重于检测挥发性有机化合物,特别是甲苯,因为这些物质对环境和人类健康构成重大风险。我们的研究展示了通过微波辅助水热合成和随后的煅烧两步工艺合成微型p型半导体材料Co3O4的制备。鉴于p型金属氧化物半导体(MOS)传感器固有的低灵敏度和选择性,我们探索了在不同温度和潮湿环境下提高p型MOS传感器的选择性和灵敏度的策略。通过添加金属有机骨架ZIF-67,提高了Co3O4的VOC检测性能。采用回流法制备了Co3O4/ZIF-67复合材料。与纯Co3O4相比,该传感器具有更强的检测能力,如Co3O4/ZIF-67复合材料在250°C时对100 ppm甲苯的响应最高(61.22),选择性指数高(5.43)。相比之下,Co3O4传感器对甲苯的响应为20.05,在250°C时选择性指数相对较低(2.86)。因此,ZIF-67的掺入导致传感器的响应和选择性的增强。此外,该传感器在各种受控相对湿度下表现出令人满意的性能。微尺寸的Co3O4/ZIF-67作为低温甲苯检测的有效材料显示出巨大的潜力,这是监测环境条件和保护人类健康的关键能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Micrometric Co3O4/ZIF-67 with high toluene detection capability
Environmental monitoring has increasingly focused on detecting volatile organic compounds (VOCs), especially toluene, as these substances pose significant environmental and human health risks. Our research demonstrates the fabrication of microscale Co3O4, a p-type semiconductor material, synthesized through a two-step process combining microwave-assisted hydrothermal synthesis and subsequent calcination. Given the inherent low sensitivity and selectivity of p-type metal oxide semiconductor (MOS) sensors, we explored strategies to enhance the selectivity and sensitivity of p-type MOS under diverse sensing conditions, including varying temperatures and humid environments. The VOC detection performance of Co3O4 was improved by adding a metal-organic framework, ZIF-67. The Co3O4/ZIF-67 composite was prepared using the reflux method. The sensor demonstrated enhanced detection capabilities compared to pure Co3O4, as evidenced by the Co3O4/ZIF-67 composite exhibiting the highest response (61.22) to 100 ppm of toluene at 250 °C, with a high selectivity index (5.43). In contrast, the Co3O4 sensor responded 20.05 to toluene, with a relatively low selectivity index (2.86) at 250 °C. Therefore, the incorporation of ZIF-67 resulted in an enhancement of the sensor's response and selectivity. Furthermore, the sensor demonstrated satisfactory performance at various controlled relative humidities. The micro-sized Co3O4/ZIF-67 demonstrates significant potential as an effective material for low-temperature toluene detection, a crucial capability for monitoring environmental conditions and protecting human health.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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