考虑回吸机制的SiC合并pin - schottky二极管的几何可伸缩电热紧凑电路模型：在电流浪涌事件中的应用

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-03-10 DOI:10.1016/j.microrel.2025.115668

A. Borghese, V. Terracciano, M. Boccarossa, A. Irace, V. d'Alessandro

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引用次数: 0

摘要

在本文中，我们以spice兼容子电路的形式介绍了为碳化硅合并PiN肖特基（MPS）二极管量身定制的紧凑模型。该模型旨在(i)描述不期望的snapback机制，这可能发生在PiN部分宽度窄和/或漂移层过厚的未优化二极管中，（ii）捕获几何相关参数对单元宽度和PiN和Schottky部分的单个宽度的依赖性，（iii）考虑温度对相关参数的影响；此外，利用欧姆定律的热当量，可以在类似spice的工具中进行静态和动态电热模拟。该子电路可用于分析受冲击冲击影响的并联MPS二极管中发生的不平衡现象。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A geometry-scalable electrothermal compact circuit model of SiC merged-PiN-Schottky diodes accounting for the snapback mechanism: Application to current surge events

In this paper, we introduce a compact model tailored for silicon carbide Merged PiN Schottky (MPS) diodes in the form of a SPICE-compatible subcircuit. The model is designed to (i) describe the undesired snapback mechanism, which is likely to occur in unoptimized diodes with narrow width of the PiN portion and/or excessively thick drift layer, (ii) capture the dependence of geometry-related parameters upon the width of the cell and the individual widths of the PiN and Schottky portions, (iii) account for the impact of temperature on the related parameters; in addition, the thermal equivalent of the Ohm's law is exploited to allow for static and dynamic electrothermal simulations within SPICE-like tools. The proposed subcircuit is adopted to analyze imbalances occurring in paralleled snapback-affected MPS diodes subjected to current surge events.

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.