不同结构SiC mosfet在不同测量条件下的阈值电压滞回特性研究

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-03-09 DOI:10.1016/j.microrel.2025.115657

Dong Xie , Patrick Heimler , Roman Boldyrjew-Mast , Mohamed Alaluss , Sven Thiele , Josef Lutz , Thomas Basler

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引用次数: 0

摘要

评估阈值电压（Vth）的偏置温度不稳定性（BTI）或门开关不稳定性（GSI）对于分析功率循环测试（PCT）中VSD-T技术计算RDS、导通和虚温的稳定性具有重要意义。但在此之前，应首先分析第v次迟滞，选择合适的第v次测量参数，消除迟滞对BTI/GSI读出的影响。本文研究了SiC mosfet在不同测量条件下的v次迟滞。不同技术之间的Vth迟滞差异是显著的。相关的测量和分析结果可以为不同类型SiC mosfet的BTI/GSI评价和PCT提供实用指导。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Threshold voltage hysteresis investigation of SiC MOSFETs with different structures under various measurement conditions

The evaluation of the bias temperature instability (BTI) or gate-switching instability (GSI) of the threshold voltage (V_th) is important for analyzing the stability of R_DS,on and virtual temperature calculation by the V_SD-T technique in the power cycling test (PCT). But before this, the V_th hysteresis should be first analyzed to choose the suitable V_th measurement parameters and eliminate the hysteresis effect on the BTI/GSI read-out. This paper investigates the V_th hysteresis of SiC MOSFETs under various measurement conditions. The differences in V_th hysteresis between different technologies are significant. Relevant measured and analytical results can provide the practical guidance for the BTI/GSI evaluation and the PCT for different types of SiC MOSFETs.

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.