混沌理论的边缘揭示了有史以来第一个也是最简单的霍奇金-赫胥黎神经回路

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Alon Ascoli, Ahmet Samil Demirkol, Ioannis Messaris, Vasilis Ntinas, Dimitris Prousalis, Stefan Slesazeck, Thomas Mikolajick, Fernando Corinto, Michele Bonnin, Marco Gilli, Pier Paolo Civalleri, Ronald Tetzlaff, Leon Chua
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引用次数: 0

摘要

霍奇金-赫胥黎模型是对生物神经元轴突复杂非线性动力学的精确而复杂的数学描述。采用四个自由度,其中三个由钠和钾记忆离子通道体现,它能够捕捉三个基本分岔的级联,特别是Hopf超临界,Hopf亚临界和鞍节点极限环分岔,通过电尖峰(在文献中也称为动作电位)的All-to-None效应,标志着从出生到灭绝的生命周期。突触电流单调变化下的跨生物轴突膜。本文引用了混沌原理的局部活动性和边缘的强大概念,以及电路理论和非线性动力学的方法,设计了第一个也是迄今为止报道的最简单的电路,该电路利用NaMLab的易失性NbOx阈值开关中特有的负差分电阻效应,并且在其最小拓扑中仅包括一个电容器和一个直流电流源,经历了三分岔级联。在单调电流扫描下出现在四阶霍奇金-赫胥黎神经元模型上,而需要的自由度只有一半,这揭示了“混沌边缘”上的忆阻器在节能生物启发电子产品方面的巨大潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Edge of Chaos Theory Unveils the First and Simplest Ever Reported Hodgkin–Huxley Neuristor

Edge of Chaos Theory Unveils the First and Simplest Ever Reported Hodgkin–Huxley Neuristor
The Hodgkin-Huxley model is an accurate yet convoluted mathematical description of the complex nonlinear dynamics of a biological neuronal axon. Employing four degrees of freedom, three of which embodied by the sodium and potassium memristive ion channels, it is capable to capture the cascade of three fundamental bifurcations, specifically a Hopf supercritical, a Hopf subcritical, and a saddle-node limit cycle bifurcation, marking the life cycle from birth to extinction via All-to-None effect of an electrical spike, also referred to as Action Potential in the literature, across biological axon membranes under monotonic change in the net synaptic current. This paper recurs to powerful concepts from the Local Activity and Edge of Chaos Principle and to methods from Circuit Theory and Nonlinear Dynamics to design the first and simplest ever-reported electrical circuit, which, leveraging the peculiar Negative Differential Resistance effects in a volatile NbOx threshold switch from NaMLab, and including additionally just one capacitor and one DC current source in its minimal topology, undergoes the three-bifurcation cascade, emerging across the fourth-order Hodgkin-Huxley neuron model under monotonic current sweep, while requiring half the number of degrees of freedom, which reveals the promising potential of Memristors on “Edge of Chaos” for energy-efficient bio-inspired electronics.
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来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
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