Pramod Martha, Mayank Kohli, Rahul Kumar and Santosh Kumar Behera
{"title":"基于垂直扩展栅极场效应晶体管(VEG-FET)的氢气传感器的设计与分析:综合建模与仿真方法","authors":"Pramod Martha, Mayank Kohli, Rahul Kumar and Santosh Kumar Behera","doi":"10.1039/D4TC04574B","DOIUrl":null,"url":null,"abstract":"<p >In this study, a novel vertically extended gate field effect transistor (VEG-FET)-based hydrogen (H<small><sub>2</sub></small>) gas sensor with a look-up-table (LUT) based modeling and simulation approach is presented. The gate area is extended vertically without affecting the intrinsic parameters to provide a larger area for the adsorption of H<small><sub>2</sub></small> molecules without increasing the sensor footprint. The gate electrode was vertically extended by depositing platinum (Pt) over a channel created in Parylene-C polymer. An analytical model was constructed for the interaction of H<small><sub>2</sub></small> gas with platinum (Pt) to determine the change in the work function (<em>Φ</em><small><sub>M</sub></small>). The Pt work function lowered by 16% for input hydrogen gas pressure (<em>P</em><small><sub>H<small><sub>2</sub></small></sub></small>) of 0 to 0.5 torr. The Pt–H<small><sub>2</sub></small> interaction information is passed to a technology computer-aided design (TCAD) tool for VEG-FET design and simulation. The drain current (<em>I</em><small><sub>DS</sub></small>) of the VEG-FET varies from 150.7 mA without H<small><sub>2</sub></small> gas to 310.3 mA at 0.5 torr hydrogen gas pressure at gate to source (<em>V</em><small><sub>GS</sub></small>) and drain to source (<em>V</em><small><sub>DS</sub></small>) voltage of 3 V. Both bioreaction and TCAD results are passed to Cadence Virtuoso for a complete gas sensor with read-out circuit simulation using the LUT method. A VEG-FET based common source amplifier with resistive load was designed and simulated, and the output voltage (<em>V</em><small><sub>out</sub></small>) varied by ∼40% for <em>P</em><small><sub>H<small><sub>2</sub></small></sub></small> = 0.5 torr.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 10","pages":" 5110-5118"},"PeriodicalIF":5.1000,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design and analysis of a vertically extended gate field effect transistor (VEG-FET)-based hydrogen gas sensor: a comprehensive modeling and simulation approach\",\"authors\":\"Pramod Martha, Mayank Kohli, Rahul Kumar and Santosh Kumar Behera\",\"doi\":\"10.1039/D4TC04574B\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >In this study, a novel vertically extended gate field effect transistor (VEG-FET)-based hydrogen (H<small><sub>2</sub></small>) gas sensor with a look-up-table (LUT) based modeling and simulation approach is presented. The gate area is extended vertically without affecting the intrinsic parameters to provide a larger area for the adsorption of H<small><sub>2</sub></small> molecules without increasing the sensor footprint. The gate electrode was vertically extended by depositing platinum (Pt) over a channel created in Parylene-C polymer. An analytical model was constructed for the interaction of H<small><sub>2</sub></small> gas with platinum (Pt) to determine the change in the work function (<em>Φ</em><small><sub>M</sub></small>). The Pt work function lowered by 16% for input hydrogen gas pressure (<em>P</em><small><sub>H<small><sub>2</sub></small></sub></small>) of 0 to 0.5 torr. The Pt–H<small><sub>2</sub></small> interaction information is passed to a technology computer-aided design (TCAD) tool for VEG-FET design and simulation. The drain current (<em>I</em><small><sub>DS</sub></small>) of the VEG-FET varies from 150.7 mA without H<small><sub>2</sub></small> gas to 310.3 mA at 0.5 torr hydrogen gas pressure at gate to source (<em>V</em><small><sub>GS</sub></small>) and drain to source (<em>V</em><small><sub>DS</sub></small>) voltage of 3 V. Both bioreaction and TCAD results are passed to Cadence Virtuoso for a complete gas sensor with read-out circuit simulation using the LUT method. A VEG-FET based common source amplifier with resistive load was designed and simulated, and the output voltage (<em>V</em><small><sub>out</sub></small>) varied by ∼40% for <em>P</em><small><sub>H<small><sub>2</sub></small></sub></small> = 0.5 torr.</p>\",\"PeriodicalId\":84,\"journal\":{\"name\":\"Journal of Materials Chemistry C\",\"volume\":\" 10\",\"pages\":\" 5110-5118\"},\"PeriodicalIF\":5.1000,\"publicationDate\":\"2025-01-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Chemistry C\",\"FirstCategoryId\":\"1\",\"ListUrlMain\":\"https://pubs.rsc.org/en/content/articlelanding/2025/tc/d4tc04574b\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Chemistry C","FirstCategoryId":"1","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2025/tc/d4tc04574b","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Design and analysis of a vertically extended gate field effect transistor (VEG-FET)-based hydrogen gas sensor: a comprehensive modeling and simulation approach
In this study, a novel vertically extended gate field effect transistor (VEG-FET)-based hydrogen (H2) gas sensor with a look-up-table (LUT) based modeling and simulation approach is presented. The gate area is extended vertically without affecting the intrinsic parameters to provide a larger area for the adsorption of H2 molecules without increasing the sensor footprint. The gate electrode was vertically extended by depositing platinum (Pt) over a channel created in Parylene-C polymer. An analytical model was constructed for the interaction of H2 gas with platinum (Pt) to determine the change in the work function (ΦM). The Pt work function lowered by 16% for input hydrogen gas pressure (PH2) of 0 to 0.5 torr. The Pt–H2 interaction information is passed to a technology computer-aided design (TCAD) tool for VEG-FET design and simulation. The drain current (IDS) of the VEG-FET varies from 150.7 mA without H2 gas to 310.3 mA at 0.5 torr hydrogen gas pressure at gate to source (VGS) and drain to source (VDS) voltage of 3 V. Both bioreaction and TCAD results are passed to Cadence Virtuoso for a complete gas sensor with read-out circuit simulation using the LUT method. A VEG-FET based common source amplifier with resistive load was designed and simulated, and the output voltage (Vout) varied by ∼40% for PH2 = 0.5 torr.
期刊介绍:
The Journal of Materials Chemistry is divided into three distinct sections, A, B, and C, each catering to specific applications of the materials under study:
Journal of Materials Chemistry A focuses primarily on materials intended for applications in energy and sustainability.
Journal of Materials Chemistry B specializes in materials designed for applications in biology and medicine.
Journal of Materials Chemistry C is dedicated to materials suitable for applications in optical, magnetic, and electronic devices.
Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive.
Bioelectronics
Conductors
Detectors
Dielectrics
Displays
Ferroelectrics
Lasers
LEDs
Lighting
Liquid crystals
Memory
Metamaterials
Multiferroics
Photonics
Photovoltaics
Semiconductors
Sensors
Single molecule conductors
Spintronics
Superconductors
Thermoelectrics
Topological insulators
Transistors