高耐久体积CMOS单晶体管低温存储器

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-02-28 DOI:10.1016/j.sse.2025.109097

A. Zaslavsky , P.R. Shrestha , V.Ortiz Jimenez , J.P. Campbell , C.A. Richter

{"title":"高耐久体积CMOS单晶体管低温存储器","authors":"A. Zaslavsky , P.R. Shrestha , V.Ortiz Jimenez , J.P. Campbell , C.A. Richter","doi":"10.1016/j.sse.2025.109097","DOIUrl":null,"url":null,"abstract":"<div><div>Previously we reported a compact one-transistor (1 T) 180 nm bulk CMOS cryo-memory with a high ≈107 I1/I0 memory window and long ≈800 s retention time based on impact-ionization-induced charging of the transistor body. Here, we present the endurance and retention characteristics of our 1 T memory obtained from high-speed measurements at T = 7 K. We observe excellent endurance, with no visible degradation over 109 write ‘1′/write ‘0′ cycles. The measured retention time varies with the memory window and the leakage current, but it exceeds 10 s for a 30X I1/I0 memory window and would be even higher in a device with no substrate contact.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"226 ","pages":"Article 109097"},"PeriodicalIF":1.4000,"publicationDate":"2025-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-endurance bulk CMOS one-transistor cryo-memory\",\"authors\":\"A. Zaslavsky , P.R. Shrestha , V.Ortiz Jimenez , J.P. Campbell , C.A. Richter\",\"doi\":\"10.1016/j.sse.2025.109097\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Previously we reported a compact one-transistor (1 T) 180 nm bulk CMOS cryo-memory with a high ≈107 I1/I0 memory window and long ≈800 s retention time based on impact-ionization-induced charging of the transistor body. Here, we present the endurance and retention characteristics of our 1 T memory obtained from high-speed measurements at T = 7 K. We observe excellent endurance, with no visible degradation over 109 write ‘1′/write ‘0′ cycles. The measured retention time varies with the memory window and the leakage current, but it exceeds 10 s for a 30X I1/I0 memory window and would be even higher in a device with no substrate contact.</div></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":\"226 \",\"pages\":\"Article 109097\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2025-02-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110125000425\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110125000425","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

在此之前，我们报道了一种紧凑的单晶体管（1t） 180 nm块体CMOS低温存储器，该存储器具有高≈107 I1/I0的存储窗口和长≈800 s的保留时间，基于晶体管体的冲击电离诱导充电。在这里，我们展示了从T = 7 K的高速测量中获得的1t存储器的耐力和保留特性。我们观察到出色的耐久性，在109个写“1”/写“0”循环中没有明显的退化。测量的保持时间随存储窗口和漏电流而变化，但对于30X I1/I0存储窗口超过10 s，并且在没有衬底接触的器件中甚至更高。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

High-endurance bulk CMOS one-transistor cryo-memory

Previously we reported a compact one-transistor (1 T) 180 nm bulk CMOS cryo-memory with a high ≈10⁷ I₁/I₀ memory window and long ≈800 s retention time based on impact-ionization-induced charging of the transistor body. Here, we present the endurance and retention characteristics of our 1 T memory obtained from high-speed measurements at T = 7 K. We observe excellent endurance, with no visible degradation over 10⁹ write ‘1′/write ‘0′ cycles. The measured retention time varies with the memory window and the leakage current, but it exceeds 10 s for a 30X I₁/I₀ memory window and would be even higher in a device with no substrate contact.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.