基于物理的电力电子模块线键剩余使用寿命预测马尔可夫链

IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
M. Ghrabli , M. Bouarroudj , L. Chamoin , E. Aldea
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引用次数: 0

摘要

本文提出了一种估算电力电子模块剩余使用寿命的新方法,其中故障是由线键退化引起的。这项工作的新颖之处在于对每个加载周期进行估计,而不是只估计到失效的循环次数。一个直接的结果是,人们可以使用所提出的方法对可变加载曲线进行预测,而经典的解决方案假设周期性加载,这限制了它们的适用性。采用故障试验数据和有限元模拟相结合的方法,对功率模块在每个周期的状态进行机械描述。利用这些力学量,我们使用马尔可夫链迭代地推断退化是如何演变的,直到失效。第一种机器学习算法用于建立退化与健康指标之间的关系,第二种算法用作有限元模拟的替代模型,以大幅减少计算时间。结果表明,所获得的模型具有较高的外推和内插能力,这意味着可以从加载条件与实际条件显著不同的实验数据中获得精确的预测。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Physics-informed Markov chains for remaining useful life prediction of wire bonds in power electronic modules

Physics-informed Markov chains for remaining useful life prediction of wire bonds in power electronic modules
This paper presents a new approach to estimate the remaining useful life of a power electronic module where failure is caused by degradation in the wire bonds. The novelty of this work is that estimation is given for each loading cycle as opposed to estimating only the number of cycles to failure. A direct consequence is that one can make predictions on variable loading profiles using the proposed method, whereas classical solutions assume periodic loading, which limits their applicability. Experimental data of failure tests are used alongside finite element simulation to mechanically describe the state of the power module at each cycle. Using these mechanical quantities, we iteratively infer how the degradation evolves using Markov chains until failure. A first machine learning algorithm is used to establish a relationship between the degradation and the health indicator, and a second algorithm is used as a surrogate model for finite element simulations to drastically reduce computational time. Results show high extrapolation and interpolation capabilities of the obtained model, meaning that precise predictions can be obtained from experimental data where loading conditions are significantly different from realistic conditions.
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来源期刊
Microelectronics Reliability
Microelectronics Reliability 工程技术-工程:电子与电气
CiteScore
3.30
自引率
12.50%
发文量
342
审稿时长
68 days
期刊介绍: Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
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