功率模块IGBT模具金属层间异常缺陷原因分析

IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Jie Chen , Yi Gong , Zhen-Guo Yang
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引用次数: 0

摘要

目前,IGBT模具在新能源汽车的动力模块中得到了广泛的应用,同时其可靠性也一直是研究的重点。如本文所述,IGBT模具Al-Ni界面异常缺陷导致新能源汽车功率模块在动力循环试验中失效。根据失效特征,通过工艺溯源、表征分析、理论分析等一系列研究方法,对缺陷进行系统调查,探索缺陷产生的根本原因。最后,通过综合分析,确定了故障的根本原因。还原了不同状态下异常缺陷的形成过程,并从Al-Ni界面的特殊分离特征确定了异常缺陷的形成机理。并根据所得结论提出了相应的对策。研究成果将有助于提高IGBT模具金属层的制备质量,提高新能源汽车动力模块的整体可靠性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Cause analysis on abnormal defects between metal layers of IGBT dies for power modules
IGBT dies are widely applied in power modules for new energy vehicles at present, and meanwhile, the reliability has been a research emphasis. As addressed in this paper, abnormal defects at the Al-Ni interfaces of IGBT dies resulted in the failure of power modules for new energy vehicles during the power cycling tests. Based on the failure characteristics, a systematical investigation was conducted to explore the root causes of these defects through a series of study methods such as process traceability, characterization analysis and theoretical analysis. At last, the root causes of the failure were determined through the comprehensive analysis. Furthermore, the formation processes of abnormal defects under different states were reverted, and the detailed formation mechanisms were also confirmed from the special separation characteristics at the Al-Ni interface. Besides, the corresponding countermeasures were also proposed according to the conclusions obtained. It was believed that the achievements would help improve the preparation quality of metal layers of IGBT dies and enhance the integral reliability of power modules for new energy vehicles.
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来源期刊
Microelectronics Reliability
Microelectronics Reliability 工程技术-工程:电子与电气
CiteScore
3.30
自引率
12.50%
发文量
342
审稿时长
68 days
期刊介绍: Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
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