富锗GeSbTe相变存储器中碳侧植入的影响

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-01-20 DOI:10.1109/LED.2025.3531547

C. De Camaret;G. Bourgeois;R. Antonelli;F. Mazen;M. Coig;F. Milesi;M. Bernard;V. Meli;S. Martin;N. Castellani;F. Andrieu;G. Navarro

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引用次数: 0

摘要

在这项工作中，我们研究了横向碳离子注入对4kb富锗GeSbTe （GST）壁式相变存储器（PCM）阵列的影响，目的是提高其可靠性。与以往的研究不同，在这里，离子束被倾斜并调谐，使碳在图画化步骤后定位在相变材料和SiN封装层之间的横向界面上，已知这对电池性能有重要影响。通过4kb阵列的表征，结合TEM/EDX分析，我们研究了这种局部化碳对器件性能的影响。碳横向植入装置显示出更可靠的成形过程，降低了SET和RESET状态的可变性，并在250°C下增强了数据保留。

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Effects of Carbon Lateral Implantation in Ge-rich GeSbTe Phase-Change Memory

In this work we investigate the effects of lateral Carbon ions implantation in 4 kb Ge-rich GeSbTe (GST) Wall-type Phase-Change Memory (PCM) arrays with the objective of improving their reliability. Differently from previous studies, the ion beam was here tilted and tuned to localize Carbon at the lateral interface between the phase-change material and the SiN encapsulation layer after the patterning steps, known to have an important impact on the cell performances. Through the characterization of 4 kb arrays combined with TEM/EDX analyses, we study the effects of such localized Carbon on the device performances. Carbon laterally implanted devices show a more reliable forming process, a variability reduction of the SET and RESET states and an enhanced data retention at 250°C.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.