对“室温下超窄线宽隧穿发光装置”的修正

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2025-02-26 DOI:10.1109/LED.2025.3537721

Yuanpeng Wu;Yixin Xiao;Kai Sun;Jianyang Xiao;Bowen Tian;Ding Wang;Danhao Wang;Kelotchi S Figueroa;Alexander McFarland;Parag B. Deotare;Zetian Mi

引用次数: 0

摘要

在上述文章b[1]中，对作者信息和资助信息进行了更正。正确的信息在署名和第一个脚注中找到。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Corrections to “A Tunneling Light-Emitting Device With Ultra-Narrow Linewidth Emission at Room-Temperature”

In the above article [1], there is a correction to author information and funding information. The correct information is found in the byline and the first footnote.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.