FD-SOI中的阻性开关现象Ω-Gate fet：晶体管性能恢复和后门偏置影响

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-01-22 DOI:10.1016/j.sse.2025.109067

C. Valdivieso, R. Rodriguez, A. Crespo-Yepes, J. Martin-Martinez, M. Nafria

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引用次数: 0

摘要

电阻开关（RS）现象是指在外加电场作用下材料的电阻发生可逆变化，通常在双端忆阻器器件中观察到。在这项工作中，在n型完全耗尽绝缘体上硅（FDSOI） Ω-gate纳米线场效应晶体管（nw - fet）中观察到RS。实验首次证明了在RS循环过程中晶体管的ID-VD特性的部分恢复，表明该器件既可以用作晶体管又可以用作忆阻器。实验还研究了增加后门电压对RS特性的影响。研究发现，较高的后门电压增强了RS参数，从而建立了反向偏置与器件性能之间的直接关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Resistive Switching phenomenon in FD-SOI Ω-Gate FETs: Transistor performance recovery and back gate bias influence

Resistive Switching (RS) phenomenon, usually observed in two-terminal memristor devices, refers to the reversible change in resistance of a material under an external electric field. In this work, RS has been observed in N-type Fully Depleted Silicon-On-Insulator (FDSOI) Ω-gate nanowire field-effect transistors (NW-FETs). For the first time, partial recovery of the transistor’s I_D-V_D characteristics during the RS cycling is experimentally demonstrated, indicating the potential of the device to be used both as a transistor and a memristor. The effect of increasing the back gate voltage on the RS characteristics was also experimentally investigated. It was found that higher back gate voltages enhance the RS parameters, thereby establishing a direct relationship between back bias and device performance.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.