顶部金属层对铝焊盘上金、银、铜线键合性能的影响

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-02-11 DOI:10.1016/j.microrel.2025.115615

Hao-Lin Yen, Fang-I Lai

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引用次数: 0

摘要

本研究分析了镀有多层顶部金属（TSM）结构的铝（Al）焊盘上金（Au）、银（Ag）和铜（Cu）线键合的可靠性。TSM结构是在Al衬垫上依次镀钛（Ti）、镍钒（NiV）和银，并以银作为表面接触层进行连接。然后，通过湿度测试，在湿度敏感等级为3的条件下进行预处理，并在200°C下进行5 h的热老化，测试了具有Au， Ag和Cu线键的TSM涂层Al焊盘的耐腐蚀性。然后通过扫描声层析成像研究了焊盘的键合界面，结果表明所有焊盘都没有出现线键脱层。拉丝强度和球剪强度测试结果表明，Cu丝键热老化后的工艺性能指数（CPK）有所提高，表明Cu丝键具有较高的热稳定性；而Au和Ag键的CPK值在热时效后略有下降。进一步分析表明，Au、Ag、Cu与TSM结构的Ag层形成固溶体，未产生金属间化合物；因此，即使在高温和高湿条件下，Au、Ag和Cu线键也表现出很高的稳定性和可靠性。本研究通过合理的导线材料选择和TSM结构设计，有助于提高芯片的可靠性和使用寿命。

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Influence of top-side metal layers on the performance of gold, silver, and copper wire bonds on aluminum pads

This study analyzed the reliability of gold (Au), silver (Ag), and copper (Cu) wire bonds on aluminum (Al) pads coated with a multilayer Top-side metal (TSM) structure. The TSM structure was created by sequentially plating titanium (Ti), nickel–vanadium (NiV), and Ag on an Al pad, with Ag used as the surface contact layer for connection. The corrosion resistance of TSM -coated Al pads with Au, Ag, and Cu wire bonds was then examined through humidity testing, which involved pretreatment under moisture sensitivity level 3, and thermal aging at 200 °C for 5 h. The bonding interfaces of the pads were then investigated through scanning acoustic tomography, which indicated that all pads exhibited no wire bonding delamination. Testing results obtained for wire pull strength and ball shear strength indicated that the process capability index (CPK) values of the Cu wire bonds increased after thermal aging, which indicated the high thermal stability of these bonds; however, the CPK values of the Au and Ag bonds decreased marginally after thermal aging. Further analysis indicated that Au, Ag, and Cu formed solid solutions with the Ag layer of the TSM structure, and no intermetallic compound was generated; thus, the Au, Ag, and Cu wire bonds exhibited high stability and reliability even under high temperature and humidity. This study aids efforts to improve chip reliability and service life through appropriate wire material selection and TSM structure design.

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.