GeSn合金在Si （adv）电子上的相参输运。板牙。2/2025)

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2025-02-10 DOI:10.1002/aelm.202570004

Prateek Kaul, Omar Concepción, Daan H. Wielens, Patrick Zellekens, Chuan Li, Zoran Ikonic, Koji Ishibashi, Qing-Tai Zhao, Alexander Brinkman, Detlev Grützmacher, Dan Buca

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引用次数: 0

摘要

文章编号2300565，Prateek Kaul， Dan Buca及其同事在硅晶片上生长的新型合金体系GeSn上对霍尔棒器件进行了磁输运测量。测量结果显示，在高锡浓度下，强相参输运具有弱局域效应和舒布尼科夫-德哈斯振荡（如图）。这些进一步用于提取直接带隙GeSn中γ -谷电子的相干长度、迁移率和有效质量，为进一步在新型材料系统上进行电子学、自旋电子学和量子计算应用的实验奠定了基础。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Phase-Coherent Transport in GeSn Alloys on Si (Adv. Electron. Mater. 2/2025)

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Phase-Coherent Transport in GeSn Alloys on Si (Adv. Electron. Mater. 2/2025)

Phase-Coherent Transport

In article number 2300565, Prateek Kaul, Dan Buca, and co-workers perform magneto-transport measurements on Hall bar devices on the novel alloy system GeSn grown on a Si wafer. The measurements reveal robust phase-coherent transport in high Sn concentrations with weak-localization effects and Shubnikov-de Haas oscillations (pictured). These are further used to extract coherence length, mobility and effective mass of Gamma-valley electrons in direct bandgap GeSn, setting forward a baseline for further experiments on the novel material system for its electronics, spintronics, and quantum computing applications.

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来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.