预测ZnO固体电解质场效应管时间动力学的神经常微分方程

IF 5.1 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Ankit Gaurav, Xiaoyao Song, Sanjeev Kumar Manhas and Maria Merlyne De Souza
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引用次数: 0

摘要

有效的存储和处理对于临时数据处理应用程序做出明智的决策至关重要,特别是在处理大量实时数据时。物理油藏计算为这个问题提供了有效的解决方案,使其成为边缘系统的理想选择。这些器件通常需要紧凑的器件电路协同设计模型。另外,机器学习(ML)可以快速预测新材料/设备的行为,而无需明确定义任何材料属性和设备物理。然而,先前报道的机器学习设备模型受到其固定隐藏层深度的限制,这限制了它们预测复杂系统变化时间动态的适应性。在这里,我们提出了一种新的方法,利用基于神经常微分方程的连续时间模型来预测基于电荷的器件的时间动态行为,固体电解质场效应管,其栅极电流特性显示出独特的负差分电阻,导致超过玻尔兹曼极限的陡峭开关。我们的模型在最小的实验数据集上训练,成功地捕获了以前未见过的兴奋性突触后电流的瞬态和稳态行为,当受到持续20-240毫秒的可变脉宽输入时,其精度高达0.06(均方根误差)。此外,我们的模型在~ 5秒内预测设备动态,比传统的基于物理的模型减少了60%的误差,这在同等的计算机上需要近一个小时。此外,该模型可以通过应用信号频率的简单改变来预测设备之间设备特性的可变性,使其成为设计水库计算等神经形态系统的有用工具。利用该模型,我们演示了一个库计算系统,该系统在语音数字分类任务中错误率最低,为0.2%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Neural ordinary differential equations for predicting the temporal dynamics of a ZnO solid electrolyte FET†

Neural ordinary differential equations for predicting the temporal dynamics of a ZnO solid electrolyte FET†

Efficient storage and processing are essential for temporal data processing applications to make informed decisions, especially when handling large volumes of real-time data. Physical reservoir computing provides effective solutions to this problem, making them ideal for edge systems. These devices typically necessitate compact models for device-circuit co-design. Alternatively, machine learning (ML) can quickly predict the behaviour of novel materials/devices without explicitly defining any material properties and device physics. However, previously reported ML device models are limited by their fixed hidden layer depth, which restricts their adaptability to predict varying temporal dynamics of a complex system. Here, we propose a novel approach that utilizes a continuous-time model based on neural ordinary differential equations to predict the temporal dynamic behaviour of a charge-based device, a solid electrolyte FET, whose gate current characteristics show a unique negative differential resistance that leads to steep switching beyond the Boltzmann limit. Our model, trained on a minimal experimental dataset successfully captures device transient and steady state behaviour for previously unseen examples of excitatory postsynaptic current when subject to an input of variable pulse width lasting 20–240 milliseconds with a high accuracy of 0.06 (root mean squared error). Additionally, our model predicts device dynamics in ∼5 seconds, with 60% reduced error over a conventional physics-based model, which takes nearly an hour on an equivalent computer. Moreover, the model can predict the variability of device characteristics from device to device by a simple change in frequency of applied signal, making it a useful tool in the design of neuromorphic systems such as reservoir computing. Using the model, we demonstrate a reservoir computing system which achieves the lowest error rate of 0.2% in the task of classification of spoken digits.

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来源期刊
Journal of Materials Chemistry C
Journal of Materials Chemistry C MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
10.80
自引率
6.20%
发文量
1468
期刊介绍: The Journal of Materials Chemistry is divided into three distinct sections, A, B, and C, each catering to specific applications of the materials under study: Journal of Materials Chemistry A focuses primarily on materials intended for applications in energy and sustainability. Journal of Materials Chemistry B specializes in materials designed for applications in biology and medicine. Journal of Materials Chemistry C is dedicated to materials suitable for applications in optical, magnetic, and electronic devices. Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive. Bioelectronics Conductors Detectors Dielectrics Displays Ferroelectrics Lasers LEDs Lighting Liquid crystals Memory Metamaterials Multiferroics Photonics Photovoltaics Semiconductors Sensors Single molecule conductors Spintronics Superconductors Thermoelectrics Topological insulators Transistors
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