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IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-02-01 DOI:10.1016/j.microrel.2025.115590

Xinpei Duan , Yahui Qing , Yong Wang , Ruohao Hong , Jiawei Chen , Pei Yang , Yanan Yin , Xinjie Zhou , Xingqiang Liu , Bei Jiang

引用次数: 0

摘要

电阻式随机存取存储器（RRAM）具有出色的耐辐射特性，因此非常适合在航空航天等恶劣辐射环境中广泛应用。这项工作专门研究了总电离剂量（TID）辐射对基于 HfO2/TaOx 的 RRAM 电气性能的影响。通过分析辐照前后的电气特性，我们深入研究了两种基于 HfO2/TaOx 的 RRAM 在高能伽马射线下的性能演变和辐射损伤机制。这项研究的结果将为开发和辐照硬化基于 HfO2/TaOx 的 RRAM 提供有价值的参考，使其能在恶劣的辐射环境中有效工作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Total ionizing dose radiation effect of HfO2/TaOx-based resistive random-access memories

Resistive random-access memory (RRAM) demonstrates excellent radiation tolerance characteristics, making it highly suitable for a wide range of applications in harsh radiation environments such as aerospace. This work specifically investigates the impact of total ionizing dose (TID) radiation on the electrical performance of HfO₂/TaO_x-based RRAM. Through an analysis of the electrical characteristics before and after irradiation, we thoroughly examine the evolution of performance and the mechanism of radiation damage in two types of HfO₂/TaO_x-based RRAMs under high-energy gamma rays. The findings from this study will serve as a valuable reference for the development and radiation hardening of HfO₂/TaO_x-based RRAMs designed to operate effectively in harsh radiation environments.

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.