紫外光固化聚合物压印纳米压印中的图案畸变

IF 2.8 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Fangfang Li , Marina Fetisova , Mervi Koskinen , Jukka Viheriälä , Tapio Niemi , Petri Karvinen , Markku Kuittinen
{"title":"紫外光固化聚合物压印纳米压印中的图案畸变","authors":"Fangfang Li ,&nbsp;Marina Fetisova ,&nbsp;Mervi Koskinen ,&nbsp;Jukka Viheriälä ,&nbsp;Tapio Niemi ,&nbsp;Petri Karvinen ,&nbsp;Markku Kuittinen","doi":"10.1016/j.mne.2024.100293","DOIUrl":null,"url":null,"abstract":"<div><div>Quantification of pattern distortion in nanoimprint lithography (NIL) is required when applying it to specific applications, especially those with tight tolerances. We present a systematic study on full wafer NIL distortion using soft stamps made of different carrier foils and UV-curable polymer structure layers. These errors are evaluated by overlay patterning using NIL and optical lithography on 4-in. wafers over a distance of 80 mm. Potential causes for pattern distortion and possible correction methods are discussed in terms of stamp composition and environmental impact. Pattern distortion along axes causing dimensional change is stamp dependent, and stiffer stamps show less pattern dimensional change than the softer ones. In the best case, the minimum variation is 4 parts per million (ppm), and in the worst case, 252 ppm with a softer stamp. Stamp flatness and uniform contact during imprinting are important in reducing high-order pattern distortion. A maximum dimensional variation of 32 ppm in a batch run demonstrates good pattern repeatability. Long-term dimensional stability can be affected by relative humidity, with variations on the order of 100 ppm.</div></div>","PeriodicalId":37111,"journal":{"name":"Micro and Nano Engineering","volume":"25 ","pages":"Article 100293"},"PeriodicalIF":2.8000,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Pattern distortion in nanoimprint lithography using UV-curable polymer stamps\",\"authors\":\"Fangfang Li ,&nbsp;Marina Fetisova ,&nbsp;Mervi Koskinen ,&nbsp;Jukka Viheriälä ,&nbsp;Tapio Niemi ,&nbsp;Petri Karvinen ,&nbsp;Markku Kuittinen\",\"doi\":\"10.1016/j.mne.2024.100293\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Quantification of pattern distortion in nanoimprint lithography (NIL) is required when applying it to specific applications, especially those with tight tolerances. We present a systematic study on full wafer NIL distortion using soft stamps made of different carrier foils and UV-curable polymer structure layers. These errors are evaluated by overlay patterning using NIL and optical lithography on 4-in. wafers over a distance of 80 mm. Potential causes for pattern distortion and possible correction methods are discussed in terms of stamp composition and environmental impact. Pattern distortion along axes causing dimensional change is stamp dependent, and stiffer stamps show less pattern dimensional change than the softer ones. In the best case, the minimum variation is 4 parts per million (ppm), and in the worst case, 252 ppm with a softer stamp. Stamp flatness and uniform contact during imprinting are important in reducing high-order pattern distortion. A maximum dimensional variation of 32 ppm in a batch run demonstrates good pattern repeatability. Long-term dimensional stability can be affected by relative humidity, with variations on the order of 100 ppm.</div></div>\",\"PeriodicalId\":37111,\"journal\":{\"name\":\"Micro and Nano Engineering\",\"volume\":\"25 \",\"pages\":\"Article 100293\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Micro and Nano Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S259000722400056X\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micro and Nano Engineering","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S259000722400056X","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

当纳米压印光刻技术应用于特定的应用场合,特别是那些具有严格公差的应用场合时,需要对其图案畸变进行定量分析。本文系统地研究了由不同载体箔和紫外光固化聚合物结构层制成的软邮票在全晶圆上的畸变。这些误差是通过在4-in上使用NIL和光学光刻的覆盖图案化来评估的。晶圆片超过80毫米的距离。从邮票的构成和对环境的影响两方面讨论了图案失真的潜在原因和可能的校正方法。沿轴方向的图案畸变引起的尺寸变化与图章有关,较硬的图章比较软的图章表现出较小的图案尺寸变化。在最好的情况下,最小变化是百万分之4 (ppm),而在最坏的情况下,最小变化是252ppm。在压印过程中,邮票的平整度和均匀接触是减少高阶图案失真的重要因素。在批量运行中,最大尺寸变化为32 ppm,显示出良好的图案可重复性。长期尺寸稳定性可能受到相对湿度的影响,其变化顺序为100ppm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Pattern distortion in nanoimprint lithography using UV-curable polymer stamps

Pattern distortion in nanoimprint lithography using UV-curable polymer stamps
Quantification of pattern distortion in nanoimprint lithography (NIL) is required when applying it to specific applications, especially those with tight tolerances. We present a systematic study on full wafer NIL distortion using soft stamps made of different carrier foils and UV-curable polymer structure layers. These errors are evaluated by overlay patterning using NIL and optical lithography on 4-in. wafers over a distance of 80 mm. Potential causes for pattern distortion and possible correction methods are discussed in terms of stamp composition and environmental impact. Pattern distortion along axes causing dimensional change is stamp dependent, and stiffer stamps show less pattern dimensional change than the softer ones. In the best case, the minimum variation is 4 parts per million (ppm), and in the worst case, 252 ppm with a softer stamp. Stamp flatness and uniform contact during imprinting are important in reducing high-order pattern distortion. A maximum dimensional variation of 32 ppm in a batch run demonstrates good pattern repeatability. Long-term dimensional stability can be affected by relative humidity, with variations on the order of 100 ppm.
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来源期刊
Micro and Nano Engineering
Micro and Nano Engineering Engineering-Electrical and Electronic Engineering
CiteScore
3.30
自引率
0.00%
发文量
67
审稿时长
80 days
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