在经典空穴输运主体上通过cn修饰平衡载流子注入/输运以提高磷光oled的性能

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2025-01-24 DOI:10.1016/j.sse.2025.109075

Yeting Tao, Yuying Wu, Yaotian Zhang, Jingsheng Wang, Youtian Tao

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引用次数: 0

摘要

通过在经典空穴输运三（4-咔唑基-9-基苯基）胺（TCTA）中咔唑的3位或4位加入强吸电子氰基，制备了两种双极性主体材料TCTA- 3cn和TCTA- 4cn。与TCTA的- 5.19/ - 1.92 eV相比，它们的HOMO/LUMO能级分别显著降低至- 5.56/ - 2.32 eV和- 5.60/ - 2.48 eV。这种cn修饰导致了载流子平衡的显著改善，证明了在相应的单载流子器件中，TCTA的空穴/电子电流比从4v时的>；16,000降低到TCTA- 3cn和TCTA- 4cn的~ 45。当用作（ppy）2Ir（acac）基器件的主体材料时，观察到发光和效率的协同增强。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Balancing carrier injection/transport through CN-modification on classical hole-transport host for enhanced performance in phosphorescent OLEDs

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Balancing carrier injection/transport through CN-modification on classical hole-transport host for enhanced performance in phosphorescent OLEDs

Two bipolar host materials, TCTA-3CN and TCTA-4CN, are developed by incorporating strong electron-withdrawing cyano groups at the 3- or 4-position of carbazole in classical hole-transport tris(4-carbazoyl-9-ylphenyl)amine (TCTA). Their HOMO/LUMO energy levels were significantly reduced to −5.56/−2.32 eV and −5.60/−2.48 eV, respectively, compared to −5.19/−1.92 eV for TCTA. This CN-modification results in a markedly improved carrier balance, as evidenced by a reduction in the hole/electron current ratio from >16,000 for TCTA to ∼45 for both TCTA-3CN and TCTA-4CN in the corresponding single-carrier devices at 4 V. When utilized as host materials for (ppy)₂Ir(acac) based devices, a synergistic enhancement in luminescence and efficiency was observed.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.