Novel Y-function methodology parameter estimation from weak to strong inversion operation

A new Y-function methodology approach for the inversion charge over the gate capacitance ratio estimation from weak to strong inversion operation has been developed. Based on the drain current expression in the linear operation regime and classical mobility law, it is demonstrated that the inversion charge over the gate capacitance ratio may be estimated from weak to strong inversion operation without any approximation by solving a second-degree equation. This latter equation depends notably on the Y-function and on three parameters which are needed to be extracted, two in strong inversion (the gain factor G_M and the second order mobility attenuation factor θ₂) and one in subthreshold zone (the subthreshold swing SS). This easy-to-use Y-function approach permits accurate and physical meaning electrical parameter extraction confirmed by the very good agreement between the experimental and the model of the drain current and of the transconductance behavior of advanced transistors from weak to strong inversion operation regime.