{"title":"Ni2Cl3I3/AgBiP2S6异质结†中可调谐谷极化和磁各向异性的极化反转","authors":"Xu Zhang, Bo Chen, Baozeng Zhou and Xiaocha Wang","doi":"10.1039/D4TC04710A","DOIUrl":null,"url":null,"abstract":"<p >Two-dimensional (2D) Janus trihalides have great potential applications in spintronics. In this work, the valley polarization of AgBiP<small><sub>2</sub></small>S<small><sub>6</sub></small> at the K′ and K points is modulated by Ni<small><sub>2</sub></small>Cl<small><sub>3</sub></small>I<small><sub>3</sub></small>, a new 2D Janus trihalide. The Ni<small><sub>2</sub></small>Cl<small><sub>3</sub></small>I<small><sub>3</sub></small>/AgBiP<small><sub>2</sub></small>S<small><sub>6</sub></small> heterojunction exhibits three different electronic properties: metallic, half-metallic, and semiconducting under different stacking configurations. The Ni<small><sub>2</sub></small>Cl<small><sub>3</sub></small>I<small><sub>3</sub></small>/AgBiP<small><sub>2</sub></small>S<small><sub>6</sub></small> heterojunction shows in-plane magnetic anisotropy in model-5 in upward polarization and out-of-plane magnetic anisotropy in model-2 in downward polarization. The Ni<small><sub>2</sub></small>Cl<small><sub>3</sub></small>I<small><sub>3</sub></small>/AgBiP<small><sub>2</sub></small>S<small><sub>6</sub></small> heterojunction exhibits a pronounced band-gap of 434 meV with model-2 in downward polarization. When spin–orbit coupling is considered, valley polarization occurs in the Ni<small><sub>2</sub></small>Cl<small><sub>3</sub></small>I<small><sub>3</sub></small>/AgBiP<small><sub>2</sub></small>S<small><sub>6</sub></small> heterojunction with a value of 19.3 meV. The band-gap, valley polarization and magnetic anisotropy energy of the system can be tuned by biaxial strain. When biaxial strains from −6% to +6% are applied, the valley polarization values of Ni<small><sub>2</sub></small>Cl<small><sub>3</sub></small>I<small><sub>3</sub></small>/AgBiP<small><sub>2</sub></small>S<small><sub>6</sub></small> can vary from 16.2 meV to 19.8 meV. Meanwhile, both the band-gap and magnetic anisotropy energy of the Ni<small><sub>2</sub></small>Cl<small><sub>3</sub></small>I<small><sub>3</sub></small>/AgBiP<small><sub>2</sub></small>S<small><sub>6</sub></small> heterojunction will also be modulated by biaxial strain. The heterojunction has a wide range of applications in the fields of spintronic, optoelectronic, and valleytronic devices, accompanied by the modulation of multiple properties of the system under biaxial strain.</p>","PeriodicalId":84,"journal":{"name":"Journal of Materials Chemistry C","volume":" 4","pages":" 1737-1746"},"PeriodicalIF":5.1000,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Tunable valley polarization and magnetic anisotropy by polarization reversal in a Ni2Cl3I3/AgBiP2S6 heterojunction†\",\"authors\":\"Xu Zhang, Bo Chen, Baozeng Zhou and Xiaocha Wang\",\"doi\":\"10.1039/D4TC04710A\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >Two-dimensional (2D) Janus trihalides have great potential applications in spintronics. In this work, the valley polarization of AgBiP<small><sub>2</sub></small>S<small><sub>6</sub></small> at the K′ and K points is modulated by Ni<small><sub>2</sub></small>Cl<small><sub>3</sub></small>I<small><sub>3</sub></small>, a new 2D Janus trihalide. The Ni<small><sub>2</sub></small>Cl<small><sub>3</sub></small>I<small><sub>3</sub></small>/AgBiP<small><sub>2</sub></small>S<small><sub>6</sub></small> heterojunction exhibits three different electronic properties: metallic, half-metallic, and semiconducting under different stacking configurations. The Ni<small><sub>2</sub></small>Cl<small><sub>3</sub></small>I<small><sub>3</sub></small>/AgBiP<small><sub>2</sub></small>S<small><sub>6</sub></small> heterojunction shows in-plane magnetic anisotropy in model-5 in upward polarization and out-of-plane magnetic anisotropy in model-2 in downward polarization. The Ni<small><sub>2</sub></small>Cl<small><sub>3</sub></small>I<small><sub>3</sub></small>/AgBiP<small><sub>2</sub></small>S<small><sub>6</sub></small> heterojunction exhibits a pronounced band-gap of 434 meV with model-2 in downward polarization. When spin–orbit coupling is considered, valley polarization occurs in the Ni<small><sub>2</sub></small>Cl<small><sub>3</sub></small>I<small><sub>3</sub></small>/AgBiP<small><sub>2</sub></small>S<small><sub>6</sub></small> heterojunction with a value of 19.3 meV. The band-gap, valley polarization and magnetic anisotropy energy of the system can be tuned by biaxial strain. When biaxial strains from −6% to +6% are applied, the valley polarization values of Ni<small><sub>2</sub></small>Cl<small><sub>3</sub></small>I<small><sub>3</sub></small>/AgBiP<small><sub>2</sub></small>S<small><sub>6</sub></small> can vary from 16.2 meV to 19.8 meV. Meanwhile, both the band-gap and magnetic anisotropy energy of the Ni<small><sub>2</sub></small>Cl<small><sub>3</sub></small>I<small><sub>3</sub></small>/AgBiP<small><sub>2</sub></small>S<small><sub>6</sub></small> heterojunction will also be modulated by biaxial strain. The heterojunction has a wide range of applications in the fields of spintronic, optoelectronic, and valleytronic devices, accompanied by the modulation of multiple properties of the system under biaxial strain.</p>\",\"PeriodicalId\":84,\"journal\":{\"name\":\"Journal of Materials Chemistry C\",\"volume\":\" 4\",\"pages\":\" 1737-1746\"},\"PeriodicalIF\":5.1000,\"publicationDate\":\"2024-11-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Chemistry C\",\"FirstCategoryId\":\"1\",\"ListUrlMain\":\"https://pubs.rsc.org/en/content/articlelanding/2025/tc/d4tc04710a\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Chemistry C","FirstCategoryId":"1","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2025/tc/d4tc04710a","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Tunable valley polarization and magnetic anisotropy by polarization reversal in a Ni2Cl3I3/AgBiP2S6 heterojunction†
Two-dimensional (2D) Janus trihalides have great potential applications in spintronics. In this work, the valley polarization of AgBiP2S6 at the K′ and K points is modulated by Ni2Cl3I3, a new 2D Janus trihalide. The Ni2Cl3I3/AgBiP2S6 heterojunction exhibits three different electronic properties: metallic, half-metallic, and semiconducting under different stacking configurations. The Ni2Cl3I3/AgBiP2S6 heterojunction shows in-plane magnetic anisotropy in model-5 in upward polarization and out-of-plane magnetic anisotropy in model-2 in downward polarization. The Ni2Cl3I3/AgBiP2S6 heterojunction exhibits a pronounced band-gap of 434 meV with model-2 in downward polarization. When spin–orbit coupling is considered, valley polarization occurs in the Ni2Cl3I3/AgBiP2S6 heterojunction with a value of 19.3 meV. The band-gap, valley polarization and magnetic anisotropy energy of the system can be tuned by biaxial strain. When biaxial strains from −6% to +6% are applied, the valley polarization values of Ni2Cl3I3/AgBiP2S6 can vary from 16.2 meV to 19.8 meV. Meanwhile, both the band-gap and magnetic anisotropy energy of the Ni2Cl3I3/AgBiP2S6 heterojunction will also be modulated by biaxial strain. The heterojunction has a wide range of applications in the fields of spintronic, optoelectronic, and valleytronic devices, accompanied by the modulation of multiple properties of the system under biaxial strain.
期刊介绍:
The Journal of Materials Chemistry is divided into three distinct sections, A, B, and C, each catering to specific applications of the materials under study:
Journal of Materials Chemistry A focuses primarily on materials intended for applications in energy and sustainability.
Journal of Materials Chemistry B specializes in materials designed for applications in biology and medicine.
Journal of Materials Chemistry C is dedicated to materials suitable for applications in optical, magnetic, and electronic devices.
Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive.
Bioelectronics
Conductors
Detectors
Dielectrics
Displays
Ferroelectrics
Lasers
LEDs
Lighting
Liquid crystals
Memory
Metamaterials
Multiferroics
Photonics
Photovoltaics
Semiconductors
Sensors
Single molecule conductors
Spintronics
Superconductors
Thermoelectrics
Topological insulators
Transistors