{"title":"基于PVT自适应偏置不敏感功率检测的23 - 28 ghz多尔蒂功率放大器","authors":"Yahia Ibrahim;Ali Niknejad","doi":"10.1109/LSSC.2025.3528055","DOIUrl":null,"url":null,"abstract":"This letter presents a compact Doherty power amplifier (PA) featuring a single transformer balun. A novel envelope power detector architecture is introduced for high-bandwidth (BW) adaptive biasing, that is, insensitive to process-voltage–temperature (PVT) variations. The measured PA attains a saturated power <inline-formula> <tex-math>$(\\mathbf {P_{\\mathrm { sat}}})$ </tex-math></inline-formula> exceeding 20.2 dBm and a power gain of 19.5 dB across the frequency range of 23–28 GHz. Moreover, it exhibits a peak power added efficiency (PAE) of 38% and a 6-dB power back-off (PBO) PAE of 27% at 25 GHz. The proposed adaptive biasing scheme enables a modulation BW of up to 800 MHz for a 64-QAM signal. Under this setting, the average output power <inline-formula> <tex-math>$(\\mathbf {P_{avg}})$ </tex-math></inline-formula> is measured at 11.3 dBm with an RMS error vector magnitude (EVM) of −24.5 dB and an average PAE of 15.5%. The PA is fabricated in Global Foundries 45-nm-SOI technology with a compact area of 0.27 mm2. To the best of the authors’ knowledge, this work is the first to demonstrate robust performance for Doherty PAs across PVT variations.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":"8 ","pages":"41-44"},"PeriodicalIF":2.2000,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 23–28-GHz Doherty Power Amplifier With a PVT Insensitive Power Detection for Adaptive Biasing\",\"authors\":\"Yahia Ibrahim;Ali Niknejad\",\"doi\":\"10.1109/LSSC.2025.3528055\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This letter presents a compact Doherty power amplifier (PA) featuring a single transformer balun. A novel envelope power detector architecture is introduced for high-bandwidth (BW) adaptive biasing, that is, insensitive to process-voltage–temperature (PVT) variations. The measured PA attains a saturated power <inline-formula> <tex-math>$(\\\\mathbf {P_{\\\\mathrm { sat}}})$ </tex-math></inline-formula> exceeding 20.2 dBm and a power gain of 19.5 dB across the frequency range of 23–28 GHz. Moreover, it exhibits a peak power added efficiency (PAE) of 38% and a 6-dB power back-off (PBO) PAE of 27% at 25 GHz. The proposed adaptive biasing scheme enables a modulation BW of up to 800 MHz for a 64-QAM signal. Under this setting, the average output power <inline-formula> <tex-math>$(\\\\mathbf {P_{avg}})$ </tex-math></inline-formula> is measured at 11.3 dBm with an RMS error vector magnitude (EVM) of −24.5 dB and an average PAE of 15.5%. The PA is fabricated in Global Foundries 45-nm-SOI technology with a compact area of 0.27 mm2. To the best of the authors’ knowledge, this work is the first to demonstrate robust performance for Doherty PAs across PVT variations.\",\"PeriodicalId\":13032,\"journal\":{\"name\":\"IEEE Solid-State Circuits Letters\",\"volume\":\"8 \",\"pages\":\"41-44\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2025-01-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Solid-State Circuits Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10836848/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Solid-State Circuits Letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10836848/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
A 23–28-GHz Doherty Power Amplifier With a PVT Insensitive Power Detection for Adaptive Biasing
This letter presents a compact Doherty power amplifier (PA) featuring a single transformer balun. A novel envelope power detector architecture is introduced for high-bandwidth (BW) adaptive biasing, that is, insensitive to process-voltage–temperature (PVT) variations. The measured PA attains a saturated power $(\mathbf {P_{\mathrm { sat}}})$ exceeding 20.2 dBm and a power gain of 19.5 dB across the frequency range of 23–28 GHz. Moreover, it exhibits a peak power added efficiency (PAE) of 38% and a 6-dB power back-off (PBO) PAE of 27% at 25 GHz. The proposed adaptive biasing scheme enables a modulation BW of up to 800 MHz for a 64-QAM signal. Under this setting, the average output power $(\mathbf {P_{avg}})$ is measured at 11.3 dBm with an RMS error vector magnitude (EVM) of −24.5 dB and an average PAE of 15.5%. The PA is fabricated in Global Foundries 45-nm-SOI technology with a compact area of 0.27 mm2. To the best of the authors’ knowledge, this work is the first to demonstrate robust performance for Doherty PAs across PVT variations.