Ultrathin High-Efficiency Zener Diode Fabricated Using Organized ZnS Nanoparticles in Surface-Grafted Poly(methacrylic acid) Matrix

Here, the fabrication method of ultrathin Zener diodes is presented utilizing a novel hybrid system of zinc sulfide (ZnS) nanoparticles embedded within a poly(methacrylic acid) (PMAA) matrix, surface-grafted via ARGET-ATRP polymerization. The controlled polymerization method facilitates precise control over layer thickness, while the in situ synthesis of ZnS nanoparticles ensures uniform coverage throughout the polymer matrix. The obtained hybrid systems with nanometric thickness (<40 nm) are characterized by diode conductivity with a clear breakdown characteristic of the Zener system. The obtained ultra-thin layers on p-doped silicon, in addition to their electrical characteristics, are studied using an atomic force microscope (AFM) and secondary ion mass spectrometry (SIMS) to examine the structure and composition of a hybrid polymer-nanoparticle system.