低通量溅射钼栅改善MoS2薄膜质量

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-11-20 DOI:10.1109/JEDS.2024.3502922

Shinya Imai;Ryo Ono;Iriya Muneta;Kuniyuki Kakushima;Tetsuya Tatsumi;Shigetaka Tomiya;Kazuo Tsutsui;Hitoshi Wakabayashi

{"title":"低通量溅射钼栅改善MoS2薄膜质量","authors":"Shinya Imai;Ryo Ono;Iriya Muneta;Kuniyuki Kakushima;Tetsuya Tatsumi;Shigetaka Tomiya;Kazuo Tsutsui;Hitoshi Wakabayashi","doi":"10.1109/JEDS.2024.3502922","DOIUrl":null,"url":null,"abstract":"Lowering the flux of sputtered particles using a molybdenum grid reduced the deposition rate of MoS2 films with an enlargement of the grain size measured by in-plane X-ray diffraction. The MoS2 film crystallinity evaluated by the Raman spectroscopy was improved because the S/Mo ratio was also enhanced by the low-rate sputtering. In addition, the enhancement of the grain size was confirmed from plan-view TEM observations of MoS2 films, consistent with the in-plane XRD results. Therefore, reducing the particle flux during sputtering is expected to contribute to the better-quality MoS2 films for pn-stacked 2D-CMOS devices and human interface devices.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"13 ","pages":"15-23"},"PeriodicalIF":2.0000,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10758789","citationCount":"0","resultStr":"{\"title\":\"Improvement of MoS2 Film Quality by Low Flux of Sputtered Particles Using a Molybdenum Grid\",\"authors\":\"Shinya Imai;Ryo Ono;Iriya Muneta;Kuniyuki Kakushima;Tetsuya Tatsumi;Shigetaka Tomiya;Kazuo Tsutsui;Hitoshi Wakabayashi\",\"doi\":\"10.1109/JEDS.2024.3502922\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Lowering the flux of sputtered particles using a molybdenum grid reduced the deposition rate of MoS2 films with an enlargement of the grain size measured by in-plane X-ray diffraction. The MoS2 film crystallinity evaluated by the Raman spectroscopy was improved because the S/Mo ratio was also enhanced by the low-rate sputtering. In addition, the enhancement of the grain size was confirmed from plan-view TEM observations of MoS2 films, consistent with the in-plane XRD results. Therefore, reducing the particle flux during sputtering is expected to contribute to the better-quality MoS2 films for pn-stacked 2D-CMOS devices and human interface devices.\",\"PeriodicalId\":13210,\"journal\":{\"name\":\"IEEE Journal of the Electron Devices Society\",\"volume\":\"13 \",\"pages\":\"15-23\"},\"PeriodicalIF\":2.0000,\"publicationDate\":\"2024-11-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10758789\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of the Electron Devices Society\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10758789/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10758789/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

利用钼栅降低溅射颗粒的通量降低了MoS2薄膜的沉积速率，并且通过平面x射线衍射测量了晶粒尺寸的增大。低速率溅射提高了S/Mo比，从而提高了MoS2薄膜的结晶度。此外，从MoS2薄膜的平面透射电镜观察证实了晶粒尺寸的增强，与平面内XRD结果一致。因此，降低溅射过程中的粒子通量有望为pn堆叠2D-CMOS器件和人机界面器件提供质量更好的MoS2薄膜。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Improvement of MoS2 Film Quality by Low Flux of Sputtered Particles Using a Molybdenum Grid

Lowering the flux of sputtered particles using a molybdenum grid reduced the deposition rate of MoS2 films with an enlargement of the grain size measured by in-plane X-ray diffraction. The MoS2 film crystallinity evaluated by the Raman spectroscopy was improved because the S/Mo ratio was also enhanced by the low-rate sputtering. In addition, the enhancement of the grain size was confirmed from plan-view TEM observations of MoS2 films, consistent with the in-plane XRD results. Therefore, reducing the particle flux during sputtering is expected to contribute to the better-quality MoS2 films for pn-stacked 2D-CMOS devices and human interface devices.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.