基于GaAs PIN二极管的220 GHz倒装开关设计

IF 3.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Terahertz Science and Technology Pub Date : 2024-10-16 DOI:10.1109/TTHZ.2024.3481959

Xiaolin Hao;Ao Zhang;Guodong Gu;Shixiong Liang;Xubo Song;Lisen Zhang;Peng Xu;Jianjun Gao;Zhihong Feng

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引用次数: 0

摘要

基于GaAs PIN二极管的低插入损耗单极单掷（SPST）和单极双掷（SPDT）开关的设计和制造工作频率高达220 GHz。建立了GaAs PIN二极管的导通状态和关断状态小信号模型，并详细说明了参数提取过程。利用倒装芯片技术将砷化镓PIN二极管安装在石英衬底上，以实现集成的亚太赫兹开关。所开发的SPST开关在220至230 GHz频率范围内具有3.2 dB插入损耗和29 dB隔离。SPDT开关的测量结果表明，在213至225 GHz的频率范围内，SPDT开关的隔离度为>20 dB，插入损耗<3.3 dB。该开关拥有基于GaAs PIN二极管的最高工作频率。

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GaAs PIN Diode Based 220 GHz Switch Design Using Flip Chip Technique

GaAs PIN diode based single-pole single-throw (SPST) and single-pole double-throw (SPDT) switches with low insertion loss have been designed and fabricated up to 220 GHz. The on -state and off -state small-signal models of GaAs PIN diodes have been developed, and the parameter extraction procedure is explained in more detail. GaAs PIN diodes have been mounted on the quartz substrate using the flip chip technique to achieve integrated subterahertz switches. The developed SPST switch has 3.2 dB insertion loss and 29 dB isolation in the frequency range of 220 to 230 GHz. The measurement of the SPDT switch reveals an isolation of >20 dB and an insertion loss of <3.3 dB in the frequency range of 213 to 225 GHz. This switch boasts the highest operating frequency reported based on GaAs PIN diodes.

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来源期刊

IEEE Transactions on Terahertz Science and Technology ENGINEERING, ELECTRICAL & ELECTRONIC-OPTICS

CiteScore

7.10

自引率

9.40%

发文量

102

期刊介绍： IEEE Transactions on Terahertz Science and Technology focuses on original research on Terahertz theory, techniques, and applications as they relate to components, devices, circuits, and systems involving the generation, transmission, and detection of Terahertz waves.