基于级联逆变器的1.48 fm模拟无电容ldo

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE
Hing Tai Chen;Xun Liu;Ka Nang Leung
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引用次数: 0

摘要

本文介绍了一种基于级联逆变器的伪功率晶体管的无电容模拟低压差稳压器(CL-LDO)。该架构支持超低电压工作、快速瞬态响应、高电流效率以及在全负载范围内具有低静态电流的高环路增益。所提出的CL-LDO无需任何外部瞬态增强电路即可轻松实现。该电路采用65纳米LP CMOS工艺制造,有效面积为0.00782 mm2。最小供电电压可低至0.5 V。最小压降电压为20mv。在1 v电源下,当负载电流从$100~\boldsymbol {\mu}$ a在5ns边缘时间内增加到50 mA时,降压为100 mV的欠冲电压为87 mV,在10ns内稳定下来。测量到的静态电流为$4~\boldsymbol {\mu}$ a,暂态优值为1.48 fs。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 1.48-fs FoM Analog Capacitorless-LDO With Cascade-Inverter-Based Pseudo-Power Transistor
A capacitorless analog low-dropout regulator (CL-LDO) with cascade-inverter-based pseudo-power transistor is presented in this letter. The proposed architecture supports ultralow-voltage operation, fast transient response, high current efficiency, and high loop gain with low quiescent current along the full load range. The proposed CL-LDO can be easily implemented without any external transient-enhancement circuit. The circuit is fabricated in a 65-nm LP CMOS process with an active area of 0.00782 mm2. The minimum supply voltage can be as low as 0.5 V. The minimum dropout voltage is 20 mV. Under a 1-V supply, the undershoot voltage with 100-mV dropout voltage is 87 mV and settles down within 10 ns when the load current increases from $100~\boldsymbol {\mu }$ A to 50 mA within 5-ns edge time. The measured quiescent current is $4~\boldsymbol {\mu }$ A. The transient figure of merit is 1.48 fs.
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来源期刊
IEEE Solid-State Circuits Letters
IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering
CiteScore
4.30
自引率
3.70%
发文量
52
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