利用凸顶电极和表面粗糙度改善RRAM的开关性能:多物理场模拟

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Jeonghwan Jang;Mincheol Shin
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引用次数: 0

摘要

在这项工作中,我们通过进行全面的多物理场模拟,探讨了采用凸顶电极(PEs)和利用表面粗糙度(SR)提高电阻性随机存取存储器(RRAM)器件开关性能的可行性。我们演示了通过应用PE成功地提高了开关比并减少了复位时间。此外,我们验证了战略性地利用SR作为改进RRAM器件性能的方法的潜力。本研究结果可作为优化RRAM开关特性的指导。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Improvement of Switching Performance of RRAM Through Protruding Top Electrode and Utilizing Surface Roughness: Multiphysics Simulations
In this work, we explore the viability of employing protruding top electrodes (PEs) and utilizing surface roughness (SR) for enhancing switching performance in resistive random access memory (RRAM) devices by conducting comprehensive multiphysics simulations. We demonstrate the successful enhancement of the on/off ratio and a reduction in the reset time through the application of PE. Furthermore, we validate the potential for strategically utilizing SR as an approach for performance improvement of RRAM devices. The results presented in this study could be utilized as a guideline for optimizing RRAM switching characteristics.
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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