GaAs和InP高电子迁移率晶体管两种噪声等效电路模型的比较

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2024-12-05 DOI:10.1109/TED.2024.3508670

Ao Zhang;Jianjun Gao

{"title":"GaAs和InP高电子迁移率晶体管两种噪声等效电路模型的比较","authors":"Ao Zhang;Jianjun Gao","doi":"10.1109/TED.2024.3508670","DOIUrl":null,"url":null,"abstract":"This article presented a novel approach for the modeling of noise behavior for GaAs and InP high-electron-mobility transistors (HEMTs). Closed-form expressions for minimum noise figure \n<inline-formula> <tex-math>${F}_{\\min } $ </tex-math></inline-formula>\n, noise resistance \n<inline-formula> <tex-math>${R}_{n} $ </tex-math></inline-formula>\n, optimum source conductance \n<inline-formula> <tex-math>${G}_{\\text {opt}} $ </tex-math></inline-formula>\n, and optimum source susceptance \n<inline-formula> <tex-math>${B}_{\\text {opt}} $ </tex-math></inline-formula>\n based on the noise equivalent circuit model are derived. The model is verified by measurements of the four noise parameters of a GaAs HEMT up to 26 GHz and an InP HEMT up to 40 GHz. The W-band low noise amplifier (LNA) is designed to validate the noise model for HEMT.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"154-161"},"PeriodicalIF":2.9000,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Comparison of Two Noise Equivalent Circuit Models for GaAs and InP High-Electron-Mobility Transistors\",\"authors\":\"Ao Zhang;Jianjun Gao\",\"doi\":\"10.1109/TED.2024.3508670\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This article presented a novel approach for the modeling of noise behavior for GaAs and InP high-electron-mobility transistors (HEMTs). Closed-form expressions for minimum noise figure \\n<inline-formula> <tex-math>${F}_{\\\\min } $ </tex-math></inline-formula>\\n, noise resistance \\n<inline-formula> <tex-math>${R}_{n} $ </tex-math></inline-formula>\\n, optimum source conductance \\n<inline-formula> <tex-math>${G}_{\\\\text {opt}} $ </tex-math></inline-formula>\\n, and optimum source susceptance \\n<inline-formula> <tex-math>${B}_{\\\\text {opt}} $ </tex-math></inline-formula>\\n based on the noise equivalent circuit model are derived. The model is verified by measurements of the four noise parameters of a GaAs HEMT up to 26 GHz and an InP HEMT up to 40 GHz. The W-band low noise amplifier (LNA) is designed to validate the noise model for HEMT.\",\"PeriodicalId\":13092,\"journal\":{\"name\":\"IEEE Transactions on Electron Devices\",\"volume\":\"72 1\",\"pages\":\"154-161\"},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2024-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Electron Devices\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10778577/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10778577/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

本文提出了一种新的方法来模拟GaAs和InP高电子迁移率晶体管（hemt）的噪声行为。推导了基于噪声等效电路模型的最小噪声系数${F}_{\min} $、噪声阻力${R}_{n} $、最佳源电导${G}_{\text {opt}} $和最佳源电纳${B}_{\text {opt}} $的封闭表达式。通过测量高达26 GHz的GaAs HEMT和高达40 GHz的InP HEMT的四个噪声参数，验证了该模型的有效性。设计了w波段低噪声放大器（LNA）来验证HEMT的噪声模型。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Comparison of Two Noise Equivalent Circuit Models for GaAs and InP High-Electron-Mobility Transistors

This article presented a novel approach for the modeling of noise behavior for GaAs and InP high-electron-mobility transistors (HEMTs). Closed-form expressions for minimum noise figure

${F}_{\min } $

, noise resistance

${R}_{n} $

, optimum source conductance

${G}_{\text {opt}} $

, and optimum source susceptance

${B}_{\text {opt}} $

based on the noise equivalent circuit model are derived. The model is verified by measurements of the four noise parameters of a GaAs HEMT up to 26 GHz and an InP HEMT up to 40 GHz. The W-band low noise amplifier (LNA) is designed to validate the noise model for HEMT.

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.