可靠触发气体开关的砷化镓光导半导体开关设计

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Long Hu;Li Zhu;Xiangrui Bu;Jia Huang;Qiqi Li;Xin Li;Weihua Liu;Chuanyu Han
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引用次数: 0

摘要

设计了一种具有场屏蔽导体的新型光导半导体开关(PCSS),使电极边缘的电场均匀化,从而能够可靠地触发高压气体开关。通过模拟静电场,优化了含PCSS的场屏蔽导体(Con-PCSS)的结构。结果表明,原始PCSS (P-PCSS)电极边缘出现明显的电场增强,导致器件失效,而Con-PCSS中电场分布相对均匀。与P-PCSS相比,Con-PCSS具有更高的耐压和更低的暗电流。实验发现,Con-PCSS在1万次射击后电流基本稳定,损伤较弱,而P-PCSS在4000次射击后电流衰减,损伤较严重。此外,与Con-PCSS集成的±80 kv气体开关通过低能光纤成功触发,显示出超过8000次连续射击的稳定开关延迟时间。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design of a GaAs Photoconductive Semiconductor Switch for Reliable Triggering of a Gas Switch
A novel photoconductive semiconductor switch (PCSS) with a field-shielding conductor was designed to homogenize the electric field at the electrode edge, thereby enabling reliable triggering of a high-voltage gas switch. The structure of the field-shielding conductor incorporated PCSS (Con-PCSS) was optimized by simulating the electrostatic field. The results indicated that a significant electric field enhancement appeared at the electrode edge of the pristine PCSS (P-PCSS), causing device failure, whereas the electric field distribution in the Con-PCSS was relatively uniform. Compared to the P-PCSS, the Con-PCSS demonstrated superior performance with a higher withstanding voltage and lower dark current. It was found experimentally that the Con-PCSS exhibited nearly stable current and weak damage over 10 000 shots, whereas the P-PCSS exhibited current decay and severe damage after only 4000 shots. Additionally, a ±80-kV gas switch integrated with the Con-PCSS was successfully triggered by a low-energy fiber, showing a stable switching delay time over 8000 continuous shots.
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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