一种具有加速孔提取和复合结构的碳化硅沟槽肖特基二极管，用于提高单事件灼烧容忍度

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-09-26 DOI:10.1109/TDMR.2024.3468468

Rui Yang;Xiaochuan Deng;Haibo Wu;Xu Li;Xuan Li;Song Bai;Yi Wen;Bo Zhang

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引用次数: 0

摘要

提出了一种具有多个p屏蔽层和嵌入N+区域的SiC沟槽结势垒肖特基二极管（MPNT-JBS），并对其进行了研究，以提高单事件烧毁（SEB）的容忍度。在MPNT-JBS中，沟槽侧壁处的肖特基接触和嵌入的N+区域加速了孔洞的提取和重组。孔积累的减少有助于减少金属/SiC界面附近的强电场，从而有利于降低高温。在50%的额定电压（$V_{\mathrm{阴极}}{=}600$ V）下，MPNT-JBS中金属/SiC界面附近的最高温度比具有多层n -缓冲的SiC JBS二极管（MB-JBS）降低了78%和71%，对应于线性能量传递（LET）值为0.53 pC/ $\mu $ m的重离子撞击Schottky触点中部和P+区域的情况。此外，MPNT-JBS的多层p -屏蔽层通过增大PN结附近的能量耗散面积和降低PN结附近的瞬态热功率来抑制PN结附近的峰值温度。与MB-JBS相比，当重离子撞击P+区（$V_{\mathrm{阴极}}{=}600$ V）中部时，MPNT-JBS在PN结附近的最高温度从1890 K降低到1454 K，这表明MPNT-JBS具有增强SEB耐压性的潜力。

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A SiC Trench Schottky Diode With Accelerated Hole Extraction and Recombination Structure for Enhancing Single-Event Burnout Tolerance

A SiC trench junction barrier Schottky diode with multiple P-shield layers and an embedded N+ region (MPNT-JBS) is proposed and investigated for enhancing single-event burnout (SEB) tolerance. The Schottky contact at the sidewall of the trench and the embedded N+ region in MPNT-JBS accelerate the extraction and recombination of holes. The mitigated accumulation of holes contributes to the reduction of the strong electric field near the metal/SiC interface, thus favoring a decrease in the high temperature. Under 50% of the rated voltage (

$V_{\mathrm { Cathode}}{=}600$

V), the maximum temperature near the metal/SiC interface in MPNT-JBS decreases by 78% and 71% compared to SiC JBS diode with multilayer N-buffer (MB-JBS), corresponding to the instances when heavy ions with a linear energy transfer (LET) value of 0.53 pC/

$\mu $

m strike the middle of the Schottky contact and the P+ region, respectively. In addition, the multilayer P-shield of MPNT-JBS suppresses the peak temperature near the PN junction by enlarging the energy dissipation area and lowering the transient heat power near the PN junction. Compared to MB-JBS, the maximum temperature near the PN junction in MPNT-JBS decreases from 1890 K to 1454 K when heavy ions strike the middle of the P+ region (

$V_{\mathrm { Cathode}}{=}600$

V). These results indicate that MPNT-JBS provides potential for enhancing SEB tolerance.

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.