Study on Electromagnetic Pulse Damage of 22nm FDSOI in Radiation Environment

This paper simulates the damage of 22nm FDSOI devices under strong electromagnetic pulse in radiation environment. After the introduction of strong electromagnetic pulse in the non-radiating device, the drain - body junction in the center of the device is damaged due to thermal deposition. The results of the strong electromagnetic damage of the device after different total ionizing doses of radiation show that the trap charge trapped in the oxide layer enhances the inverse pattern of the device after radiation. At the same time when the strong electromagnetic pulse is introduced, the electric field intensity in the channel region decreases and the current density increases compared with that before radiation. As a result, the thermal power density of the device increases and the thermal damage time point of the device advances. Finally, the simulation results of different radiation regions show that the trap charge in the BOX layer is the main reason for the reliability reduction of the device.