重复热应力法在CMOS工艺中氘钝化的研究

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-09-25 DOI:10.1109/TDMR.2024.3467249

Ju-Won Yeon;Sung-Su Yoon;Hyo-Jun Park;Tae-Hyun Kil;Dong-Hyun Wang;Khwang-Sun Lee;Dae-Han Jung;Ja-Yun Ku;Jun-Young Park

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引用次数: 0

摘要

高压氘退火（HPDA）是一种很有前途的提高器件性能和可靠性的工艺。然而，HPDA后附加的热应力会导致栅极介电界面上Si-D键的钝化。在本研究中，进行了重复热应力条件下氘退火mosfet的电学表征，以获得进行金属后退火的指南。在硅片上制备了mosfet，以验证氘的钝化和去钝化。器件参数包括子阈值摆幅（SS）、通状态电流$(I_{\mathrm {ON}})$、关状态电流$(I_{\mathrm {OFF}})$、栅极漏电流$(I_{\mathrm {G}})$进行全面比较。最后，应用热载流子注入（HCI）应力来比较氘去钝化引起的应力免疫变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Investigation of Deuterium De-Passivation by Repetitive Thermal Stress in CMOS Fabrication

High-pressure deuterium annealing (HPDA) has been proposed as a promising process to enhance device performance and reliability. However, additional thermal stress after the HPDA can lead to de-passivation of Si-D bonds at the gate dielectric interface. In this study, electrical characterization of deuterium annealed MOSFETs after repetitive thermal stress conditions is performed to obtain guidelines for conducting post-metal annealing. MOSFETs are fabricated on silicon wafer to verify the passivation as well as de-passivation of deuterium. Device parameters including subthreshold swing (SS), on-state current

$(I_{\mathrm { ON}})$

, off-state current

$(I_{\mathrm { OFF}})$

, and gate leakage

$(I_{\mathrm { G}})$

, are comprehensively compared. Finally, hot-carrier injection (HCI) stress is applied to compare the changes in stress immunity resulting from deuterium de-passivation.

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.