多畴hf基反铁电材料的热噪声诱导相变:疲劳和持久性能

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Sheng Luo, Zijie Zheng, Zuopu Zhou, Xiao Gong, Gengchiau Liang
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引用次数: 0

摘要

hf基反铁电(AFE)材料耐久性的恶化是其器件应用可靠性的关键挑战,确定进一步优化的机制非常重要。本文提出了一个随机AFE动力学模型来描述热噪声引起的晶格振动引起的疲劳行为。通过对反铁电与铁电(FE)相之间的噪声辅助相变的分析,评估了热效应对耐久性的影响,结果与实验结果吻合较好。温度和偶极子耦合强度是引起噪声疲劳的关键因素。此外,热噪声引起的随机动力学对基于afe的存储器的可靠性有深远的影响,并且存储器窗口与温度和域动力学直接相关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Thermal Noise-Induced Phase Transition in Multi-Domain Hf-Based Antiferroelectric Material: Fatigue and Endurance Performance

Thermal Noise-Induced Phase Transition in Multi-Domain Hf-Based Antiferroelectric Material: Fatigue and Endurance Performance
The deterioration of the endurance performance in the Hf-based antiferroelectric (AFE) material is a crucial challenge in the reliability of its device applications, and it is important to identify the mechanism for further optimizations. In this work, a stochastic AFE dynamic model is proposed to characterize the fatigue behaviors induced by thermal noise-induced lattice vibration. Through the analysis of the noise-assisted phase transition between the antiferroelectric and ferroelectric (FE) phases, the impact of the thermal effect on endurance is evaluated and the results are in good agreement with the experiments. Both temperature and dipole coupling strength are found to be the key factors in noise-induced fatigue. Furthermore, the thermal noise-induced stochastic dynamics is found to have a profound impact in the AFE-based memory's reliability, and the memory window demonstrates direct dependency on temperature and domain dynamics.
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来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
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