一种自适应亚谐波脉冲注入晶体振荡器,可在-40°C到125°C下工作

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE
Yingjie Zhu;Yiqing Lan;Humiao Li;Haoran Lyu;Zhen Kong;Jian Zhao;Yida Li;Guoxing Wang;Jiamin Li;Longyang Lin
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引用次数: 0

摘要

亚谐波脉冲注入晶体振荡器在振荡峰值和振荡谷的能量注入频率较低,可实现亚西北向工作。然而,这对喷射精度提出了严格的要求,影响了操作功率、抖动和可靠性。为了确保在最小开销下在宽温度下精确的谷峰注入,本工作提出了基于零电压检测(ZVD)的闭环时序自适应、不平衡差分注入和振荡直流稳定技术,用于单电源16次谐波脉冲注入晶体振荡器(XO)。该IC采用22nm FDSOI制造,可在-40~^{\circ}$ C至125~^{\circ}$ C的最宽温度范围内工作,并在消耗0.72 nW和0.006 mm2的情况下实现11 ppb Allan偏差下限。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An Adaptive Subharmonic Pulse Injection Crystal Oscillator Achieving —40 ∘C to 125 ∘C Operation
Subharmonic pulse injection crystal oscillators enable sub-nW operation with less frequent energy injection at oscillation peaks and valleys. However, this poses stringent requirements on the injection accuracy, which affects operation power, jitter, and reliability. To ensure accurate valley and peak injection across a wide temperature at minimum overhead, this work proposes the zero-voltage detection (ZVD)-based closed-loop timing adaptation, unbalanced differential injection and oscillation DC stabilizing techniques for a single-supply 16th subharmonic pulse-injection-based crystal oscillator (XO). Fabricated in 22-nm FDSOI, the IC enables operation across the widest reported temperature range from $-40~^{\circ }$ C to $125~^{\circ }$ C, and achieves a 11 ppb Allan deviation floor while consuming 0.72 nW and 0.006 mm2.
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来源期刊
IEEE Solid-State Circuits Letters
IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering
CiteScore
4.30
自引率
3.70%
发文量
52
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