掺磷n型金刚石的p沟道mosfet

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-10-24 DOI:10.1109/LED.2024.3485683

Wen Zhao;Satoshi Koizumi;Meiyong Liao

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引用次数: 0

摘要

p沟道金属氧化物半导体场效应晶体管（mosfet）在掺磷n型金刚石薄膜上得到了证明。p通道性质源于n型金刚石表面氢化终止所产生的表面电导率。该MOSFET具有正常导通特性，磷浓度为1016 cm−3时阈值为1.8 V，通/关比为107。最大漏极电流约为- 4.5 mA/mm，跨导率为0.75 mS/mm，随n型金刚石脱膜中磷浓度的增加而减小。在n型金刚石薄膜上的p沟道mosfet的演示为在单个金刚石晶圆上开发互补MOS （CMOS）电路铺平了道路。

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P-Channel MOSFETs on Phosphorous-Doped n-Type Diamond

P-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) have been demonstrated on phosphorus-doped n-type diamond epilayers. The p-channel nature arises from the surface conductivity resulting from hydrogenated termination on the n-type diamond surface. The MOSFET exhibits normally-on properties and shows a threshold of 1.8 V for the phosphorus concentration of 1016 cm−3 and an on/off ratio of 107. The maximum drain current is approximately −4.5 mA/mm and the transconductance is 0.75 mS/mm, which decreases as the phosphorus concentration in the n-type diamond epilayer increases. The demonstration of p-channel MOSFETs on n-type diamond epilayers paves the way for the development of complementary MOS (CMOS) circuits on a single diamond wafer.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.