基于绿色激光结晶的高可靠性HfO2/ZrO2超晶格铁电多晶硅FinFET存储器件

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-10-24 DOI:10.1109/LED.2024.3485900

Chen-You Wei;Yung-Teng Fang;Yi-Ju Yao;Chih-Chao Yang;Fu-Ju Hou;Chien-Chun Chen;Yung-Hsien Wu;Yung-Chun Wu

{"title":"基于绿色激光结晶的高可靠性HfO2/ZrO2超晶格铁电多晶硅FinFET存储器件","authors":"Chen-You Wei;Yung-Teng Fang;Yi-Ju Yao;Chih-Chao Yang;Fu-Ju Hou;Chien-Chun Chen;Yung-Hsien Wu;Yung-Chun Wu","doi":"10.1109/LED.2024.3485900","DOIUrl":null,"url":null,"abstract":"In this study, we employ GIXRD to determine that the HfO2/ZrO2 superlattice (SL-HZO) exhibits a higher proportion of orthorhombic phase than conventional HZO. We first demonstrate low-temperature polycrystalline silicon (LTPS) formed by green laser crystallization with SL-HZO to manufacture ferroelectric FinFET (Fe-FinFET). SEM and AFM analyses confirmed the high quality of the modified polycrystalline silicon channel. The LTPS/SL-HZO Fe-FinFET demonstrated an impressive memory window (MW) of 1.93 V under ±5 V high-speed (100 ns) pulse operation. It exhibited a robust endurance of \n<inline-formula> <tex-math>$10^{{6}}$ </tex-math></inline-formula>\n cycles, with the MW remaining stable at 1.92 V over \n<inline-formula> <tex-math>$10^{{4}}$ </tex-math></inline-formula>\n s without degradation. In conclusion, the LTPS/SL-HZO Fe-FinFET shows outstanding performance and reliability, indicating significant potential for non-volatile memory applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2272-2275"},"PeriodicalIF":4.1000,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-Reliability HfO2/ZrO2 Superlattice Ferroelectric Poly-Si FinFET Memory Device Utilizing Green Laser Crystallization\",\"authors\":\"Chen-You Wei;Yung-Teng Fang;Yi-Ju Yao;Chih-Chao Yang;Fu-Ju Hou;Chien-Chun Chen;Yung-Hsien Wu;Yung-Chun Wu\",\"doi\":\"10.1109/LED.2024.3485900\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, we employ GIXRD to determine that the HfO2/ZrO2 superlattice (SL-HZO) exhibits a higher proportion of orthorhombic phase than conventional HZO. We first demonstrate low-temperature polycrystalline silicon (LTPS) formed by green laser crystallization with SL-HZO to manufacture ferroelectric FinFET (Fe-FinFET). SEM and AFM analyses confirmed the high quality of the modified polycrystalline silicon channel. The LTPS/SL-HZO Fe-FinFET demonstrated an impressive memory window (MW) of 1.93 V under ±5 V high-speed (100 ns) pulse operation. It exhibited a robust endurance of \\n<inline-formula> <tex-math>$10^{{6}}$ </tex-math></inline-formula>\\n cycles, with the MW remaining stable at 1.92 V over \\n<inline-formula> <tex-math>$10^{{4}}$ </tex-math></inline-formula>\\n s without degradation. In conclusion, the LTPS/SL-HZO Fe-FinFET shows outstanding performance and reliability, indicating significant potential for non-volatile memory applications.\",\"PeriodicalId\":13198,\"journal\":{\"name\":\"IEEE Electron Device Letters\",\"volume\":\"45 12\",\"pages\":\"2272-2275\"},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2024-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Electron Device Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10734310/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10734310/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

在这项研究中，我们使用GIXRD确定了HfO2/ZrO2超晶格（SL-HZO）比常规HZO具有更高的正交相比例。我们首先展示了低温多晶硅（LTPS）由绿色激光结晶与SL-HZO形成，以制造铁电FinFET （Fe-FinFET）。SEM和AFM分析证实了改性多晶硅通道的高质量。LTPS/SL-HZO Fe-FinFET在±5 V高速（100 ns）脉冲工作下显示了令人印象深刻的1.93 V记忆窗口（MW）。它表现出$10^{{4}}$ $循环的耐用性，MW在$10^{{4}}$ s以上稳定在1.92 V而没有退化。总之，LTPS/SL-HZO Fe-FinFET表现出出色的性能和可靠性，显示出非易失性存储器应用的巨大潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

High-Reliability HfO2/ZrO2 Superlattice Ferroelectric Poly-Si FinFET Memory Device Utilizing Green Laser Crystallization

In this study, we employ GIXRD to determine that the HfO2/ZrO2 superlattice (SL-HZO) exhibits a higher proportion of orthorhombic phase than conventional HZO. We first demonstrate low-temperature polycrystalline silicon (LTPS) formed by green laser crystallization with SL-HZO to manufacture ferroelectric FinFET (Fe-FinFET). SEM and AFM analyses confirmed the high quality of the modified polycrystalline silicon channel. The LTPS/SL-HZO Fe-FinFET demonstrated an impressive memory window (MW) of 1.93 V under ±5 V high-speed (100 ns) pulse operation. It exhibited a robust endurance of

$10^{{6}}$

cycles, with the MW remaining stable at 1.92 V over

$10^{{4}}$

s without degradation. In conclusion, the LTPS/SL-HZO Fe-FinFET shows outstanding performance and reliability, indicating significant potential for non-volatile memory applications.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.