硅mosfet中hfo2 / sio2栅介电介质的低温氘退火

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-11-20 DOI:10.1109/JEDS.2024.3502738

Tae-Hyun Kil;Ju-Won Yeon;Hyo-Jun Park;Moon-Kwon Lee;Eui-Cheol Yun;Min-Woo Kim;Sang-Min Kang;Jun-Young Park

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引用次数: 0

摘要

在这项研究中，提出了300°C低温氘退火（LTDA）来提高硅基高k金属栅极（HKMG） mosfet的性能和可靠性。在相同条件下，与氢（H2）退火进行了对比研究，以评估氘（D2）的比影响。在热载流子注入（HCI）和正偏置应力（PBS）条件下，进行了全面的DC表征和应力免疫评估。结果证实，即使在300°C的低温下，D2对器件性能和可靠性的影响也比H2更大。该研究为降低HKMG mosfet的退火温度提供了指导。

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Low-Temperature Deuterium Annealing for HfO₂/SiO₂ Gate Dielectric in Silicon MOSFETs

In this study, low-temperature deuterium annealing (LTDA) at 300 °C is proposed to enhance both the performance and reliability of silicon-based high-k metal gate (HKMG) MOSFETs. A comparative study with hydrogen (H2) annealing under identical conditions is conducted to evaluate the specific impact of deuterium (D2). Comprehensive DC characterizations and evaluations of stress immunity under hot-carrier injection (HCI) and positive bias stress (PBS) conditions, are performed. The results confirm that even at a low temperature of 300 °C, D2 has a more substantial effect on device performance and reliability compared to H2. This study provides a guideline for reducing the annealing temperature in the fabrication of HKMG MOSFETs.

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.