Tianyu Xie;Wei Li;Yuqi Wang;Ruixin Song;Yue Wang;Wen Xu;Donglei Zhou;Hongwei Song
{"title":"掺杂锌镱的硅太阳能电池量子切割光伏转换膜","authors":"Tianyu Xie;Wei Li;Yuqi Wang;Ruixin Song;Yue Wang;Wen Xu;Donglei Zhou;Hongwei Song","doi":"10.1109/LED.2024.3485905","DOIUrl":null,"url":null,"abstract":"Currently, silicon solar cells (SSCs) have been the most widely used photovoltaic devices all around the world. However, the fundamental studies about SSCs are moving slowly as one of the key obstacles is the limited response to ultraviolet (UV) light. Here, we use the Yb\n<inline-formula> <tex-math>$^{{3}+}$ </tex-math></inline-formula>\n doped perovskite quantum dots (PeQDs) with highly efficient quantum cutting emission to enhance the UV response of SSCs. Zn\n<inline-formula> <tex-math>$^{{2}+}$ </tex-math></inline-formula>\n ions are co-doped to increase the exciton binding energy, decrease the defect density and improve the tolerance factor of PeQDs. Experimental and theoretical results show that Zn\n<inline-formula> <tex-math>$^{{2}+}$ </tex-math></inline-formula>\n, Yb\n<inline-formula> <tex-math>$^{{3}+}$ </tex-math></inline-formula>\n co-doped CsPbCl3 PeQDs are successfully synthesized with a photoluminescence quantum yield (PLQY) of 182.4%. By integrating PeQDs film with SSCs, the spectral response in the range of \n<inline-formula> <tex-math>$200\\sim 400$ </tex-math></inline-formula>\n nm is largely enhanced. Importantly, the maximum photovoltaic conversion efficiency (PCE) of SSCs is increased from 18.6% to 21.2%. This study proposes a more cost-effective, convenient, and effective method for improving the PCE of SSCs, which is in line with the current industry’s application requirements and urgent problems to be solved.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2471-2474"},"PeriodicalIF":4.1000,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Quantum Cutting Photovoltaic Conversion Film Doped With Zinc and Ytterbium for Silicon Solar Cells\",\"authors\":\"Tianyu Xie;Wei Li;Yuqi Wang;Ruixin Song;Yue Wang;Wen Xu;Donglei Zhou;Hongwei Song\",\"doi\":\"10.1109/LED.2024.3485905\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Currently, silicon solar cells (SSCs) have been the most widely used photovoltaic devices all around the world. However, the fundamental studies about SSCs are moving slowly as one of the key obstacles is the limited response to ultraviolet (UV) light. Here, we use the Yb\\n<inline-formula> <tex-math>$^{{3}+}$ </tex-math></inline-formula>\\n doped perovskite quantum dots (PeQDs) with highly efficient quantum cutting emission to enhance the UV response of SSCs. Zn\\n<inline-formula> <tex-math>$^{{2}+}$ </tex-math></inline-formula>\\n ions are co-doped to increase the exciton binding energy, decrease the defect density and improve the tolerance factor of PeQDs. Experimental and theoretical results show that Zn\\n<inline-formula> <tex-math>$^{{2}+}$ </tex-math></inline-formula>\\n, Yb\\n<inline-formula> <tex-math>$^{{3}+}$ </tex-math></inline-formula>\\n co-doped CsPbCl3 PeQDs are successfully synthesized with a photoluminescence quantum yield (PLQY) of 182.4%. By integrating PeQDs film with SSCs, the spectral response in the range of \\n<inline-formula> <tex-math>$200\\\\sim 400$ </tex-math></inline-formula>\\n nm is largely enhanced. Importantly, the maximum photovoltaic conversion efficiency (PCE) of SSCs is increased from 18.6% to 21.2%. This study proposes a more cost-effective, convenient, and effective method for improving the PCE of SSCs, which is in line with the current industry’s application requirements and urgent problems to be solved.\",\"PeriodicalId\":13198,\"journal\":{\"name\":\"IEEE Electron Device Letters\",\"volume\":\"45 12\",\"pages\":\"2471-2474\"},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2024-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Electron Device Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10734132/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10734132/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Quantum Cutting Photovoltaic Conversion Film Doped With Zinc and Ytterbium for Silicon Solar Cells
Currently, silicon solar cells (SSCs) have been the most widely used photovoltaic devices all around the world. However, the fundamental studies about SSCs are moving slowly as one of the key obstacles is the limited response to ultraviolet (UV) light. Here, we use the Yb
$^{{3}+}$
doped perovskite quantum dots (PeQDs) with highly efficient quantum cutting emission to enhance the UV response of SSCs. Zn
$^{{2}+}$
ions are co-doped to increase the exciton binding energy, decrease the defect density and improve the tolerance factor of PeQDs. Experimental and theoretical results show that Zn
$^{{2}+}$
, Yb
$^{{3}+}$
co-doped CsPbCl3 PeQDs are successfully synthesized with a photoluminescence quantum yield (PLQY) of 182.4%. By integrating PeQDs film with SSCs, the spectral response in the range of
$200\sim 400$
nm is largely enhanced. Importantly, the maximum photovoltaic conversion efficiency (PCE) of SSCs is increased from 18.6% to 21.2%. This study proposes a more cost-effective, convenient, and effective method for improving the PCE of SSCs, which is in line with the current industry’s application requirements and urgent problems to be solved.
期刊介绍:
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.