掺杂锌镱的硅太阳能电池量子切割光伏转换膜

IF 4.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Tianyu Xie;Wei Li;Yuqi Wang;Ruixin Song;Yue Wang;Wen Xu;Donglei Zhou;Hongwei Song
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引用次数: 0

摘要

硅太阳能电池(SSCs)是目前世界上应用最广泛的光伏器件。然而,关于ssc的基础研究进展缓慢,主要障碍之一是对紫外线(UV)的有限响应。在这里,我们使用Yb $^{{3}+}$掺杂的钙钛矿量子点(PeQDs)具有高效的量子切割发射来增强ssc的紫外响应。通过共掺杂Zn $^{{2}+}$离子,提高了激子结合能,降低了缺陷密度,提高了peqd的容差系数。实验和理论结果表明,成功合成了Zn $^{{2}+}$, Yb $^{{3}+}$共掺杂的CsPbCl3 PeQDs,光致发光量子产率(PLQY)为182.4%。通过将PeQDs薄膜与ssc相结合,在$200\ ~ $ 400$ nm范围内的光谱响应大大增强。重要的是,ssc的最大光伏转换效率(PCE)从18.6%提高到21.2%。本研究提出了一种更加经济、便捷、有效的提高ssc PCE的方法,符合当前行业的应用需求和亟待解决的问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Quantum Cutting Photovoltaic Conversion Film Doped With Zinc and Ytterbium for Silicon Solar Cells
Currently, silicon solar cells (SSCs) have been the most widely used photovoltaic devices all around the world. However, the fundamental studies about SSCs are moving slowly as one of the key obstacles is the limited response to ultraviolet (UV) light. Here, we use the Yb $^{{3}+}$ doped perovskite quantum dots (PeQDs) with highly efficient quantum cutting emission to enhance the UV response of SSCs. Zn $^{{2}+}$ ions are co-doped to increase the exciton binding energy, decrease the defect density and improve the tolerance factor of PeQDs. Experimental and theoretical results show that Zn $^{{2}+}$ , Yb $^{{3}+}$ co-doped CsPbCl3 PeQDs are successfully synthesized with a photoluminescence quantum yield (PLQY) of 182.4%. By integrating PeQDs film with SSCs, the spectral response in the range of $200\sim 400$ nm is largely enhanced. Importantly, the maximum photovoltaic conversion efficiency (PCE) of SSCs is increased from 18.6% to 21.2%. This study proposes a more cost-effective, convenient, and effective method for improving the PCE of SSCs, which is in line with the current industry’s application requirements and urgent problems to be solved.
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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