更正：短沟道长度为 40 nm 的介形 In-Ga-Zn-O 垂直沟道薄膜晶体管中电流提升的有效策略

IF 5.1 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Journal of Materials Chemistry C Pub Date : 2024-11-19 DOI:10.1039/D4TC90191F

Chae-Eun Oh, Young-Ha Kwon, Nak-Jin Seong, Kyu-Jeong Choi and Sung-Min Yoon

引用次数: 0

摘要

Chae-Eun Oh 等人撰写的 "具有 40 nm 短沟道长度的介形 In-Ga-Zn-O 垂直沟道薄膜晶体管中电流提升的有效策略 "的更正，J. Mater.Chem.C，2024，12，14455-14468，https://doi.org/10.1039/D4TC02779E。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Correction: Effective strategies for current boosting in a mesa-shaped In–Ga–Zn–O vertical-channel thin-film transistor with a short-channel length of 40 nm

Correction for ‘Effective strategies for current boosting in a mesa-shaped In–Ga–Zn–O vertical-channel thin-film transistor with a short-channel length of 40 nm’ by Chae-Eun Oh et al., J. Mater. Chem. C, 2024, 12, 14455–14468, https://doi.org/10.1039/D4TC02779E.

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来源期刊

Journal of Materials Chemistry C MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

CiteScore

10.80

自引率

6.20%

发文量

1468

期刊介绍： The Journal of Materials Chemistry is divided into three distinct sections, A, B, and C, each catering to specific applications of the materials under study: Journal of Materials Chemistry A focuses primarily on materials intended for applications in energy and sustainability. Journal of Materials Chemistry B specializes in materials designed for applications in biology and medicine. Journal of Materials Chemistry C is dedicated to materials suitable for applications in optical, magnetic, and electronic devices. Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive. Bioelectronics Conductors Detectors Dielectrics Displays Ferroelectrics Lasers LEDs Lighting Liquid crystals Memory Metamaterials Multiferroics Photonics Photovoltaics Semiconductors Sensors Single molecule conductors Spintronics Superconductors Thermoelectrics Topological insulators Transistors