低温下基于 HfO₂ 的 RRAM 器件的成型和电阻开关

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-10-24 DOI:10.1109/LED.2024.3485873

Emilio Perez-Bosch Quesada;Alberto Mistroni;Ruolan Jia;Keerthi Dorai Swamy Reddy;Felix Reichmann;Helena Castan;Salvador Dueñas;Christian Wenger;Eduardo Perez

{"title":"低温下基于 HfO₂ 的 RRAM 器件的成型和电阻开关","authors":"Emilio Perez-Bosch Quesada;Alberto Mistroni;Ruolan Jia;Keerthi Dorai Swamy Reddy;Felix Reichmann;Helena Castan;Salvador Dueñas;Christian Wenger;Eduardo Perez","doi":"10.1109/LED.2024.3485873","DOIUrl":null,"url":null,"abstract":"Reliable data storage technologies able to operate at cryogenic temperatures are critical to implement scalable quantum computers and develop deep-space exploration systems, among other applications. Their scarce availability is pushing towards the development of emerging memories that can perform such storage in a non-volatile fashion. Resistive Random-Access Memories (RRAM) have demonstrated their switching capabilities down to 4K. However, their operability at lower temperatures still remain as a challenge. In this work, we demonstrate for the first time the forming and resistive switching capabilities of CMOS-compatible RRAM devices at 1.4K. The HfO2-based devices are deployed following an array of 1-transistor-1-resistor (1T1R) cells. Their switching performance at 1.4K was also tested in the multilevel-cell (MLC) approach, storing up to 4 resistance levels per cell.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2391-2394"},"PeriodicalIF":4.1000,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Forming and Resistive Switching of HfO₂-Based RRAM Devices at Cryogenic Temperature\",\"authors\":\"Emilio Perez-Bosch Quesada;Alberto Mistroni;Ruolan Jia;Keerthi Dorai Swamy Reddy;Felix Reichmann;Helena Castan;Salvador Dueñas;Christian Wenger;Eduardo Perez\",\"doi\":\"10.1109/LED.2024.3485873\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Reliable data storage technologies able to operate at cryogenic temperatures are critical to implement scalable quantum computers and develop deep-space exploration systems, among other applications. Their scarce availability is pushing towards the development of emerging memories that can perform such storage in a non-volatile fashion. Resistive Random-Access Memories (RRAM) have demonstrated their switching capabilities down to 4K. However, their operability at lower temperatures still remain as a challenge. In this work, we demonstrate for the first time the forming and resistive switching capabilities of CMOS-compatible RRAM devices at 1.4K. The HfO2-based devices are deployed following an array of 1-transistor-1-resistor (1T1R) cells. Their switching performance at 1.4K was also tested in the multilevel-cell (MLC) approach, storing up to 4 resistance levels per cell.\",\"PeriodicalId\":13198,\"journal\":{\"name\":\"IEEE Electron Device Letters\",\"volume\":\"45 12\",\"pages\":\"2391-2394\"},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2024-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Electron Device Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10734308/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10734308/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

能够在低温条件下运行的可靠数据存储技术对于实现可扩展量子计算机和开发深空探测系统等应用至关重要。这些技术的稀缺性推动了能够以非易失性方式进行此类存储的新兴存储器的发展。电阻式随机存取存储器（RRAM）已经证明了其低至 4K 的开关能力。然而，它们在较低温度下的可操作性仍然是一个挑战。在这项工作中，我们首次展示了与 CMOS 兼容的 RRAM 器件在 1.4K 温度下的成型和电阻开关能力。基于 HfO2 的器件采用 1 晶体管-1 电阻（1T1R）单元阵列。它们在 1.4K 下的开关性能还通过多级单元 (MLC) 方法进行了测试，每个单元最多可存储 4 个电阻级。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Forming and Resistive Switching of HfO₂-Based RRAM Devices at Cryogenic Temperature

Reliable data storage technologies able to operate at cryogenic temperatures are critical to implement scalable quantum computers and develop deep-space exploration systems, among other applications. Their scarce availability is pushing towards the development of emerging memories that can perform such storage in a non-volatile fashion. Resistive Random-Access Memories (RRAM) have demonstrated their switching capabilities down to 4K. However, their operability at lower temperatures still remain as a challenge. In this work, we demonstrate for the first time the forming and resistive switching capabilities of CMOS-compatible RRAM devices at 1.4K. The HfO2-based devices are deployed following an array of 1-transistor-1-resistor (1T1R) cells. Their switching performance at 1.4K was also tested in the multilevel-cell (MLC) approach, storing up to 4 resistance levels per cell.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.