IGZO/ITO 异质结构沟道薄膜晶体管中的有效界面沟道控制

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-10-10 DOI:10.1109/LED.2024.3477438

Jie Luo;Yanyu Yang;Yupeng Lu;Yunjiao Bao;Guilei Wang;Gaobo Xu;Huaxiang Yin;Chao Zhao;Jun Luo

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引用次数: 0

摘要

在对非晶氧化物半导体薄膜晶体管（TFT）的研究过程中，研究人员发现含有异质结构沟道的 TFT 具有优异的迁移率。本研究的重点是对界面沟道形成和器件性能调制的物理洞察。研究采用了 InGaZnO / InSnO 异质结构沟道 TFT。利用紫外光电子能谱和反射电子能量损失能谱阐明了其界面沟道的能带结构。通过研究异质结构沟道 TFT 的带状结构，我们发现 InSnO 层的厚度可以通过量子约束效应改变界面带边。由此，异质结构沟道 TFT 的阈值电压发生了变化。

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Effective Interface Channel Control in IGZO/ITO Heterostructure-Channel Thin Film Transistors

During the investigation of amorphous oxide semiconductor thin film transistors (TFTs), researchers found that TFTs containing a heterostructure-channel demonstrate exceptional mobility. This study focuses on the physical insights into the interfacial channel formation and modulating the device performance. The InGaZnO / InSnO heterostructure-channel TFTs were utilized. The band structure of their interface channel was elucidated by Ultraviolet Photoelectron Spectroscopy and Reflection Electron Energy Loss Spectroscopy. Through the examination of the band structures of heterostructure -channel TFTs, we have discovered that the thickness of the InSnO layer can modify the interface band-edge via the quantum confinement effect. By that, the threshold voltage of the heterostructure-channel TFT was altered.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.