在 1T-1C DRAM 中使用 a-IGZO 单元晶体管集成高 k 电容器的强脉冲光退火技术

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-10-24 DOI:10.1109/LED.2024.3485609

Heetae Kim;Seohak Park;Johak Jeong;Jihoon Jeon;Hoseok Lee;Chihun Sung;Jeho Na;Min Ju Kim;Seong Keun Kim;Sung-Yool Choi;Keun Heo;Sung Haeng Cho;Byung Jin Cho

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引用次数: 0

摘要

在这项研究中，我们报告了利用强脉冲光（IPL）退火技术将 a-IGZO 单元晶体管和高 k ZrO2 单元电容器集成到 1T-1C DRAM 应用中的情况。通过 IPL 退火，ZrO2 电容器可成功达到 33 的高 k 值，而不会对易受高温工艺影响的 IGZO 晶体管的电气性能产生任何不利影响。即使在高 k 电介质结晶过程之后，a-IGZO 晶体管仍能保持 1.3 倍 10^{-{16}}$ A/ $\mu $ m 的超低漏电流。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Intense Pulsed Light Annealing for High-k Capacitor Integration in 1T-1C DRAM With a-IGZO Cell Transistors

In this study, we report the integration of an a-IGZO cell transistor and a high-k ZrO2 cell capacitor using Intense Pulsed Light (IPL) annealing for 1T-1C DRAM application. With IPL annealing, the ZrO2 capacitor can successfully achieve a high k-value of 33, without any detrimental effect to the electrical performance of the IGZO transistor which is vulnerable to high temperature process. The a-IGZO transistor could maintain an ultra-low leakage current of

$1.3\times 10^{-{16}}$

$\mu $

m, even after the high-k dielectric crystallization process.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.